DSEI2X101-06A IXYS SEMICONDUCTOR, DSEI2X101-06A Datasheet - Page 2

• Manufacturer Part Number: DSEI2X101-06A
• Description: FAST RECTIFIER, DUAL, 96A, SOT-227B
• Manufacturer: IXYS SEMICONDUCTOR

Specifications of DSEI2X101-06A

• Repetitive Reverse Voltage Vrrm Max: 600V
• Forward Current If(av): 96A
• Forward Voltage Vf Max: 1.25V
• Diode Configuration: Dual Independent
• Diode Type: Fast Recovery
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

© 2000 IXYS All rights reserved
Fig. 1 Forward current I
Fig. 4 Dynamic parameters Q
Fig. 7 Transient thermal impedance junction to case at various duty cycles
Z
I
F
K
thJC
K/W
0.05
150
125
100
f
1.4
1.2
1.0
0.8
0.6
0.4
0.1
A
75
50
25
0.001
0
1
0.0
0
D=0.7
0.3
0.2
0.1
versus T
0.5
0.05
T
T
VJ
VJ
Single Pulse
=100°C
=150°C
0.5
50
VJ
Q
r
0.01
I
RM
F
100
T
1.0
versus V
VJ
V
T
F
VJ
=25°C
r
V
, I
°C
RM
F
150
1.5
0.1
t
rr
Q
Fig. 2 Reverse recovery charge Q
Fig. 5 Recovery time t
r
260
240
220
200
180
160
140
120
ns
C
7
6
5
4
3
2
1
0
100
0
T
V
VJ
R
versus -di
= 100°C
= 300V
200
400
I
I
I
1
F
F
F
F
=200A
=100A
= 50A
/dt
s
-di
600
F
rr
-di
/dt
T
V
versus -di
t
F
VJ
R
/dt
I
I
I
= 100°C
= 300V
F
F
F
A/
800
=200A
=100A
= 50A
A/
DSEI 2x101-06
m
m
s
s
1000
1000
10
F
r
/dt
I
V
RM
FR
Fig. 3 Peak reverse current I
Fig. 6 Peak forward voltage V
Constants for Z
80
70
60
50
40
30
20
10
60
V
50
40
30
20
10
A
0
0
1
2
3
4
5
i
0
0
T
V
VJ
R
t
I
I
I
fr
F
F
F
versus -di
= 100°C
= 300V
versus di
=200A
=100A
= 50A
200
200
DSEI 2x 101, 600V
R
0.02
0.05
0.076
0.24
0.114
thi
400
400
thJC
(K/W)
F
/dt
F
/dt
calculation:
600
600
di
-di
V
T
I
F
F
FR
/dt
F
VJ
/dt
= 100°C
A/
= 100A
800
800
t
0.00002
0.00081
0.01
0.94
0.45
m
i
(s)
s
RM
FR
1000
1000
A/
and t
m
3.0
2.5
2.0
1.5
1.0
0.5
0.0
s
2 - 2
s
t
fr
fr