DSEI60-06A IXYS SEMICONDUCTOR, DSEI60-06A Datasheet
DSEI60-06A
Manufacturer Part Number
DSEI60-06A
Description
FAST DIODE, 60A, 600V, TO-247AD
Manufacturer
IXYS SEMICONDUCTOR
Datasheet
1.DSEI60-06A.pdf
(3 pages)
Specifications of DSEI60-06A
Repetitive Reverse Voltage Vrrm Max
600V
Forward Current If(av)
60A
Forward Voltage Vf Max
1.8V
Reverse Recovery Time Trr Max
35ns
Forward Surge Current Ifsm Max
550A
Diode Type
Fast Recovery
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
DSEI60-06A
Manufacturer:
FSC
Quantity:
6 000
Part Number:
DSEI60-06A
Manufacturer:
IXYS/艾赛斯
Quantity:
20 000
Company:
Part Number:
DSEI60-06AT
Manufacturer:
IXYS
Quantity:
12 500
Fast Recovery
Epitaxial Diode (FRED)
I
IXYS reserves the right to change limits, test conditions and dimensions.
© 2007 IXYS All rights reserved
Symbol
I
I
I
I
I
T
T
T
P
M
Weight
Symbol
I
V
V
r
R
R
t
I
FRMS
FAVM
FRM
FSM
2
R
RM
rr
T
V
600
600
t
VJ
VJM
stg
tot
F
T0
thJC
thCH
d
FAVM
RSM
V
rating includes reverse blocking losses at T
V
600
600
RRM
V
Conditions
T
t
T
T
T
T
T
mounting torque
typical
Conditions
V
V
V
I
For power-loss calculations only
T
(version A)
I
V
L < 0.05 µH; T
p
F
F
C
VJ
VJ
VJ
VJ
C
VJ
R
R
R
R
< 0 µs; rep. rating, pulse width limited by T
= 70 A
= A; -di/dt = 200 A/µs; V
= 70°C; rectangular, d = 0.5
= 25°C
= V
= 0.8·V
= 0.8·V
= 350 V; I
= 45°C;
= 50°C; t = 0 ms
= 45°C;
= 50°C; t = 0 ms
= T
Type
DSEI 60-06A
DSEI 60-06AT
RRM
VJM
RRM
RRM
F
= 60 A; -di
t = 0 ms
t = 8.3 ms (60 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 0 ms
t = 8.3 ms (60 Hz), sine
t = 8.3 ms (60 Hz), sine
VJ
= 00°C
T
T
T
T
T
VJ
VJ
VJ
VJ
VJ
= 25°C
= 50°C
= 25°C
= 25°C
= 25°C
F
/dt = 480 A/µs
(50 Hz), sine
(50 Hz), sine
(50 Hz), sine
(50 Hz), sine
R
= 30 V; T
VJM
. V
R
=
VJ
0.8·V
= 25°C
VJM
RRM
Characteristic Values
,
duty cycle d = 0.5
Maximum Ratings
0.25
A
typ.
6.0
35
-55...+50
-55...+50
0.8....2
50
490
50
20
max.
.3
0.75
00
550
600
480
520
50
66
200
00
.5
.8
4.7
7.5
60
4
50
6
K/W
K/W
Nm
mW
A
A
mA
µA
µA
°C
°C
°C
C
ns
W
2
2
A
A
A
A
V
V
V
A
g
s
s
I
V
t
TO-247 AD
A = Anode, C = Cathode
Features
• International standard package
• Planar passivated chips
• Very short recovery time
• Extremely low switching losses
• Low IRM-values
• Soft recovery behaviour
• Epoxy meets UL 94V-0
Applications
• Antiparallel diode for high frequency
• Anti saturation diode
• Snubber diode
• Free wheeling diode in converters
• Rectifiers in switch mode power
• Inductive heating and melting
• Uninterruptible power supplies (UPS)
• Ultrasonic cleaners and welders
Advantages
• High reliability circuit operation
• Low voltage peaks for reduced
• Low noise switching
• Low losses
• Operating at lower temperature or
C
FAV
rr
JEDEC TO-247 AD
switching devices
and motor control circuits
supplies (SMPS)
protection circuits
space saving by reduced cooling
RRM
A
= 60 A
= 600 V
= 35 ms
TO-268 AA
(AT Type)
DSEI60-06A
DSEI60-06AT
C
A
A
- 3
C
Related parts for DSEI60-06A
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
DIODE FRED 1000V 60A TO-247AD
Manufacturer:
IXYS
Datasheet:
Part Number:
Description:
DIODE FRED 1200V 52A TO-247AD
Manufacturer:
IXYS
Datasheet:
Part Number:
Description:
DIODE FRED 200V 69A TO-247AD
Manufacturer:
IXYS
Datasheet:
Part Number:
Description:
Discrete Semiconductor Modules 1000 Amps 100V
Manufacturer:
IXYS
Datasheet:
Part Number:
Description:
Discrete Semiconductor Modules 300 Amps 1200V
Manufacturer:
IXYS
Datasheet:
Part Number:
Description:
Discrete Semiconductor Modules 450 Amps 1200V
Manufacturer:
IXYS
Datasheet:
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
IXYS
Datasheet:
Part Number:
Description:
Discrete Semiconductor Modules 1500 Amps 75V
Manufacturer:
IXYS
Datasheet:
Part Number:
Description:
Discrete Semiconductor Modules 300 Amps 1200V
Manufacturer:
IXYS
Datasheet:
Part Number:
Description:
Discrete Semiconductor Modules 225 Amps 1200V
Manufacturer:
IXYS
Datasheet:
Part Number:
Description:
DIODE MODULE EPITAXIAL 600V 95A
Manufacturer:
IXYS
Datasheet:
Part Number:
Description:
MODULE IGBT CBI E1
Manufacturer:
IXYS
Datasheet:
Part Number:
Description:
MODULE IGBT CBI E2
Manufacturer:
IXYS
Datasheet:
Part Number:
Description:
MOSFET N-CH 100V 1245A Y3-LI
Manufacturer:
IXYS
Datasheet:
Part Number:
Description:
THYRISTOR DIODE MODULE
Manufacturer:
IXYS
Datasheet:
DSEI60-06A Summary of contents
Page 1
... 25° /dt = 480 A/µs 6.0 F 0.8· duty cycle d = 0.5 RRM VJM R DSEI60-06A DSEI60-06AT FAV V = 600 V RRM TO-247 TO-268 AA (AT Type Anode Cathode Features • International standard package A JEDEC TO-247 • Planar passivated chips • Very short recovery time A • ...
Page 2
Fig. 1 Forward current versus voltage drop. Fig. 4 Dynamic parameters versus junction temperature. Fig. 7 Transient thermal impedance junction to case. IXYS reserves the right to change limits, test conditions and dimensions © 2007 IXYS All rights reserved Fig. ...
Page 3
... E 4.32 F 5 1.0 K 10 0.4 N 1.5 N DSEI60-06A DSEI60-06AT Inches Max. Min. Max. 0.780 0.800 0.819 0.845 0.610 0.640 3.65 0.140 0.144 5.49 0.170 0.216 6.2 0.212 0.244 2.13 0.065 0.084 4.5 - 0.177 1.4 0.040 0.055 11.0 0.426 0.433 5 ...