DS17-12A IXYS SEMICONDUCTOR, DS17-12A Datasheet - Page 2

• Manufacturer Part Number: DS17-12A
• Description: DIODE,RECTI,1200V,25A,STUD ANODE,DO4
• Manufacturer: IXYS SEMICONDUCTOR

Specifications of DS17-12A

• Repetitive Reverse Voltage Vrrm Max: 1.2kV
• Forward Current If(av): 25A
• Forward Voltage Vf Max: 1.36V
• Forward Surge Current Ifsm Max: 400A
• Operating Temperature Range: -40°C
• Diode Type: Avalanche
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Z
Fig. 1 Forward characteristics
Fig. 4 Power dissipation versus forward current and ambient temperature
Fig. 6 Transient thermal impedance junction to heatsink
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I
P
thJH
F
100
K/W
F
80
60
40
20
50
W
40
30
20
10
A
0
0
2
1
0
10
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
0
-3
T
T
VJ
VJ
= 180°C
= 25°C
10
10
20
-2
V
F
typ.
30
DC
180° sin
120°
60°
30°
I
V
F(AV)M
lim.
10
-1
40
A
I
FSM
Fig. 2 Surge overload current
400
300
200
100
50
0
0
A
0
10
-3
50Hz, 80% V
10
I
FSM
0
T
: crest value, t: duration
50
VJ
= 180°C
10
-2
RRM
100
10
T
VJ
T
1
amb
= 45°C
10
-1
t
150
t
R
2.8 K/W
3.2 K/W
4,8 K/W
6.3 K/W
8.5 K/W
Cu 80x80
thJA
s
s
:
°C
10
200
10
0
2
I
Fig. 3 I
Fig. 5 Max. forward current at case
R
Constants for Z
F(AV)M
I
1000
2
thJH
t
800
600
400
200
100
1
2
3
4
180°
120°
A
i
DC
40
30
20
10
d
60°
30°
2
A
0
s
for various conduction angles d:
DS 17
DSA 17
1
0
temperature 180° sine
V
2
t versus time (1-10 ms)
R
= 0 V
T
VJ
R
0.1006
0.5311
0.8683
0.600
= 45°C
thi
50
R
thJH
thJH
2
(K/W)
2.10
2.23
2.33
2.53
2.72
(K/W)
calculation:
3
100
T
4 5 6 7 8 9
DSI 17
DSAI 17
VJ
t
0.0021
0.0881
2.968
3.20
i
T
= 180°C
(s)
c
ase
150
t
°C
2 - 2
ms
10