IXA12IF1200PB IXYS SEMICONDUCTOR, IXA12IF1200PB Datasheet - Page 4

• Manufacturer Part Number: IXA12IF1200PB
• Description: IGBT,1200V,20A,TO-220
• Manufacturer: IXYS SEMICONDUCTOR

Specifications of IXA12IF1200PB

• Transistor Type: IGBT
• Dc Collector Current: 20A
• Collector Emitter Voltage Vces: 2.1V
• Power Dissipation Max: 85W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -55°C To +150°C
• Transistor: RoHS Compliant
• Transistor Case Style: TO-220
• Rohs Compliant: Yes
• Power Dissipation Pd: 85W

IXYS reserves the right to change limits, conditions and dimensions.
© 2011 IXYS all rights reserved
Q
2x
L1
2x
E2
b2
1
b4
2x
e
2
E
3
3x
D
L
b
C
A
A1
A2
S
Ø
Data according to IEC 60747and per diode unless otherwise specified
P
E1
4
Ø
P1
D1
D2
Sym.
A
A1
A2
D
E
E2
e
L
L1
Ø P
Q
S
b
b2
b4
c
D1
D2
E1
Ø P1
IXA12IF1200HB
min.
0.185 0.209
0.087 0.102
0.059 0.098
0.819 0.845
0.610 0.640
0.170 0.216
0.780 0.800
0.140 0.144
0.212 0.244
0.039 0.055
0.065 0.094
0.102 0.135
0.015 0.035
0.515
0.020 0.053
0.530
0.215 BSC
0.242 BSC
-
-
Inches
max.
0.177
0.29
-
-
20.79 21.45
15.48 16.24
19.80 20.30
13.07
13.45
Millimeter
4.70
2.21
1.50
4.31
3.55
5.38
0.99
1.65
2.59
0.38
0.51
min.
5.46 BSC
6.14 BSC
-
-
preliminary
max.
5.30
2.59
2.49
5.48
4.49
3.65
6.19
1.40
2.39
3.43
0.89
1.35
7.39
20110330a
-
-