IXA20I1200PB IXYS SEMICONDUCTOR, IXA20I1200PB Datasheet
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IXA20I1200PB
Specifications of IXA20I1200PB
Related parts for IXA20I1200PB
IXA20I1200PB Summary of contents
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... 1200 V CEK V = 900 ± Ω non-repetitive G Data according to IEC 60747and per diode unless otherwise specified IXA20I1200PB preliminary C25 1200 CES V 1 CE(sat)typ Package: ● Housing: TO-220 ●rIndustry standard outline ●rEpoxy meets UL 94V-0 ●rRoHS compliant min. typ. max. Unit = 25°C 1200 = 25°C ± ...
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... IXYS reserves the right to change limits, conditions and dimensions. © 2009 IXYS all rights reserved Conditions T = 25° ° 600 / A/µ Data according to IEC 60747and per diode unless otherwise specified IXA20I1200PB preliminary Ratings min. typ. max. n/a n 25°C n 125 °C n/a VJ n/a n 125 °C VJ n/a ...
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... IXYS all rights reserved Conditions Part Name Marking on Product IXA20I1200PB Dim Data according to IEC 60747and per diode unless otherwise specified IXA20I1200PB Ratings min. typ. -55 -55 0.50 0.4 20 Part number I = IGBT X = XPT IGBT A = Gen 1 / std 20 = Current Rating [ Single IGBT 1200 ...
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... E 2 [mJ [A] C Fig. 5 Typ. switching energy vs. collector current IXYS reserves the right to change limits, conditions and dimensions. © 2009 IXYS all rights reserved = 125° off Data according to IEC 60747and per diode unless otherwise specified IXA20I1200PB 125° [ [V] CE Fig. 2 Typ. output characteristics ...