IXA20I1200PB IXYS SEMICONDUCTOR, IXA20I1200PB Datasheet

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IXA20I1200PB

Manufacturer Part Number
IXA20I1200PB
Description
IGBT,1200V,33A,TO-220
Manufacturer
IXYS SEMICONDUCTOR
Datasheet

Specifications of IXA20I1200PB

Transistor Type
IGBT
Dc Collector Current
33A
Collector Emitter Voltage Vces
2.1V
Power Dissipation Max
130W
Collector Emitter Voltage V(br)ceo
1.2kV
Operating Temperature Range
-55°C To +150°C
Transistor
RoHS Compliant
Transistor Case Style
TO-220
Rohs Compliant
Yes
Power Dissipation Pd
130W
XPT IGBT
Single IGBT
Part number
IXA20I1200PB
● Easy paralleling due to the positive temperature
● Rugged XPT design (Xtreme light Punch Through)
● Thin wafer technology combined with the XPT design
Symbol
V
V
I
P
I
I
V
V
Q
t
t
t
t
E
E
RBSOA
SCSOA
t
I
R
IXYS reserves the right to change limits, conditions and dimensions.
© 2009 IXYS all rights reserved
Features / Advantages:
I
IGBT
C25
C90
GES
SC
SC
CES
d(on)
d(off)
r
f
CES
GES
tot
CE(sat)
GE(th)
on
off
coefficient of the on-state voltage
results in:
- short circuit rated for 10 µsec.
- very low gate charge
- low EMI
- square RBSOA @ 3x Ic
results in a competitive low VCE(sat)
thJC
Gon
Collector emitter saturation voltage
Total gate charge
Turn-on delay time
Current rise time
Turn-off delay time
Current fall time
Turn-off energy per pulse
Short circuit duration
Definition
Collector emitter voltage
Maximum DC gate voltage
Collector current
Total power dissipation
Collector emitter leakage current
Gate emitter leakage current
Gate emitter threshold voltage
Turn-on energy per pulse
Reverse bias safe operation area
Short circuit safe operation area
Short circuit current
Thermal resistance juntion to case
V
V = V
V
I =
I =
V
Inductive load
V
V
V
V
V
R =
Conditions
C
C
GE
CE
CE
CE
GE
CEK
CE
CE
GE
G
= 0 V
= 0 V; V = ±20 V
=
=
= ±15 V; R =
=
=
16
=
0.6
Applications:
● AC motor drives
● Solar inverter
● Medical equipment
● Uninterruptible power supply
● Air-conditioning systems
● Welding equipment
● Switched-mode and resonant-mode
● Inductive heating, cookers
600
600
Data according to IEC 60747and per diode unless otherwise specified
1200
900
CES
power supplies
56
A; V =
15
mA; V
Ω
V; V
V; I =
; V = 0 V
V;
V; V = ±15 V
GE
GE
; non-repetitive
V
GE
C
GE
GE
G
R =
GE
15
G
=
= V
15
15
56
V
CE
A
56
Ω
V; I =
Ω
(G) 1
C
15
A
(C) 2
(E) 3
T
T
T
T
T
T
T
T
T
T
T
T
VJ
VJ
C
C
VJ
VJ
VJ
VJ
VJ
VJ
VJ
VJ
= 25°C
=
= 125°C
= 25°C
= 25°C
= 25°C
= 90°C
= 25°C
=
= 25°C
=
= 125°C
125
125
125
● Housing: TO-220
I
V
V
Package:
●rIndustry standard outline
●rEpoxy meets UL 94V-0
●rRoHS compliant
°C
°C
°C
C25
CES
CE(sat)typ
IXA20I1200PB
min.
5.5
R a t i n g s
=
=
=
typ.
1.55
250
100
0.1
1.8
2.1
1.7
47
70
40
6
1200
max.
preliminary
1200
1.8 V
0.95
130
500
±20
33
0.1
2.1
6.5
33
22
45
10
60
20090409
A
V
Unit
K/W
mA
mA
mJ
mJ
nC
nA
ns
ns
ns
ns
µs
W
V
V
A
A
V
V
V
A
A

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IXA20I1200PB Summary of contents

Page 1

... 1200 V CEK V = 900 ± Ω non-repetitive G Data according to IEC 60747and per diode unless otherwise specified IXA20I1200PB preliminary C25 1200 CES V 1 CE(sat)typ Package: ● Housing: TO-220 ●rIndustry standard outline ●rEpoxy meets UL 94V-0 ●rRoHS compliant min. typ. max. Unit = 25°C 1200 = 25°C ± ...

Page 2

... IXYS reserves the right to change limits, conditions and dimensions. © 2009 IXYS all rights reserved Conditions T = 25° ° 600 / A/µ Data according to IEC 60747and per diode unless otherwise specified IXA20I1200PB preliminary Ratings min. typ. max. n/a n 25°C n 125 °C n/a VJ n/a n 125 °C VJ n/a ...

Page 3

... IXYS all rights reserved Conditions Part Name Marking on Product IXA20I1200PB Dim Data according to IEC 60747and per diode unless otherwise specified IXA20I1200PB Ratings min. typ. -55 -55 0.50 0.4 20 Part number I = IGBT X = XPT IGBT A = Gen 1 / std 20 = Current Rating [ Single IGBT 1200 ...

Page 4

... E 2 [mJ [A] C Fig. 5 Typ. switching energy vs. collector current IXYS reserves the right to change limits, conditions and dimensions. © 2009 IXYS all rights reserved = 125° off Data according to IEC 60747and per diode unless otherwise specified IXA20I1200PB 125° [ [V] CE Fig. 2 Typ. output characteristics ...

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