IXA37IF1200HJ IXYS SEMICONDUCTOR, IXA37IF1200HJ Datasheet - Page 6

• Manufacturer Part Number: IXA37IF1200HJ
• Description: IGBT,1200V,58A,ISOPLUS247
• Manufacturer: IXYS SEMICONDUCTOR

Specifications of IXA37IF1200HJ

• Transistor Type: IGBT
• Dc Collector Current: 58A
• Collector Emitter Voltage Vces: 2.1V
• Power Dissipation Max: 195W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -55°C To +150°C
• Transistor Case Style: ISOPLUS-247
• Rohs Compliant: Yes
• Power Dissipation Pd: 195W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, conditions and dimensions.
© 2010 IXYS all rights reserved
I
[A]
[A]
[mJ]
E
RR
I
F
rec
2.0
1.6
1.2
0.8
0.4
0.0
60
50
40
30
20
10
70
60
50
40
30
20
10
0
0
300
300
0.0
Fig. 5 Typ. recovery energy E
Fig. 9 Typ. peak reverse current I
Fig. 7 Typ. Forward current versus V
T
V
T
V
400
400
VJ
R
VJ
R
0.5
= 125°C
= 600 V
= 125°C
= 600 V
T
T
VJ
VJ
500
500
= 125°C
= 25°C
1.0
600
600
di
di
F
F
V
/dt [A/µs]
/dt [A/µs]
F
700
700
1.5
[V]
800
800
2.0
rec
versus di/dt
900 1000 1100
900 1000 1100
RM
vs. di/dt
2.5
F
60 A
30 A
15 A
60 A
30 A
15 A
3.0
Data according to IEC 60747and per diode unless otherwise specified
[ns]
t
[K/W]
Z
rr
[µC]
Q
thJC
rr
700
600
500
400
300
200
100
0.01
0.1
7
6
5
4
3
2
1
0
10
300
300
0.001
1
Fig. 8 Typ. reverse recov.charge Q
Fig. 10 Typ. recovery time t
Fig. 12 Typ. transient thermal impedance
400
400
T
V
VJ
R
= 125°C
= 600 V
500
500
0.01
600
600
di
di
IXA37IF1200HJ
F
F
/dt [A/µs]
/dt [A/µs]
700
700
t
p
0.1
[s]
800
800
rr
versus di/dt
T
V
900 1000 1100
900 1000 1100
VJ
R
rr
= 125°C
= 600 V
1
vs. di/dt
Diode
60 A
30 A
15 A
60 A
30 A
15 A
IGBT
20100623c
10