IXA45IF1200HB IXYS SEMICONDUCTOR, IXA45IF1200HB Datasheet - Page 2
IXA45IF1200HB
Manufacturer Part Number
IXA45IF1200HB
Description
IGBT,1200V,74A,TO-247
Manufacturer
IXYS SEMICONDUCTOR
Datasheet
1.IXA45IF1200HB.pdf
(6 pages)
Specifications of IXA45IF1200HB
Transistor Type
IGBT
Dc Collector Current
78A
Collector Emitter Voltage Vces
2.1V
Power Dissipation Max
325W
Collector Emitter Voltage V(br)ceo
1.2kV
Operating Temperature Range
-55°C To +150°C
Transistor
RoHS Compliant
Transistor Case Style
TO-247
Rohs Compliant
Yes
Power Dissipation Pd
325W
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXA45IF1200HB
Manufacturer:
FSC
Quantity:
12 000
Symbol
I
I
V
Q
I
t
E
R
Symbol
V
R
V
R
R
R
R
R
τ
τ
τ
τ
IXYS reserves the right to change limits, conditions and dimensions.
© 2010 IXYS all rights reserved
Diode
F25
F
RM
rr
Equivalent Circuits for Simulation
1
2
3
4
rec(off)
thJC
100
F
0
0
0
0
1
2
3
4
rr
I
V
R1
0
C1
Definition
Forward current
Forward voltage
Reverse recovery charge
Maximum reverse recovery current
Reverse recovery time
Reverse recovery losses at turn-off
Thermal resistance juntion to case
Definition
IGBT
Diode
R
0
R2
C2
R3
C3
R4
Conditions
T = 25°C
T =
I =
V =
di /dt = -
I =
C4
F
F
C
C
R
F
100
30
30
600
Data according to IEC 60747and per diode unless otherwise specified
A
A
°C
V
600
A/µs;
T
T
T
T
T
VJ
VJ
VJ
VJ
VJ
= 25°C
=
=
=
=
125
125
150
150
°C
°C
°C
°C
IXA45IF1200HB
min.
min.
0.07
0.113
0.055
0.142
0.0006
0.2
0.006
0.05
IGBT
Ratings
Ratings
typ.
typ.
1.95
1.95
350
3.5
0.9
30
max.
max.
1.25
28.3
0.16
0.12
0.15
0.27
0.0005
0.004
0.02
0.15
2.2
0.7
1.1
Diode
60
33
39
20100702b
Unit
K/W
Unit
m
m
µC
mJ
ns
Ω
Ω
A
A
V
V
A
V
V