IXGA20N120A3 IXYS SEMICONDUCTOR, IXGA20N120A3 Datasheet - Page 4

• Manufacturer Part Number: IXGA20N120A3
• Description: IGBT,1200V,20A,TO-263AA
• Manufacturer: IXYS SEMICONDUCTOR

Specifications of IXGA20N120A3

• Transistor Type: IGBT
• Dc Collector Current: 40A
• Collector Emitter Voltage Vces: 2.5V
• Power Dissipation Max: 180W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -55°C To +150°C
• Transistor Case Style: TO-263AA
• Rohs Compliant: Yes
• Power Dissipation Pd: 180W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
10,000
1,000
100
1.00
0.10
0.01
16
14
12
10
10
0.00001
8
6
4
2
0
0
0
f
= 1MHz
5
5
10
10
Fig. 7. Transconductance
15
T
0.0001
J
Fig. 9. Capacitance
= - 40ºC
15
I
V
C
20
CE
- Amperes
C res
- Volts
20
25ºC
25
125ºC
C oes
25
30
C ies
Fig. 11. Maximum Transient Thermal Impedance
0.001
30
35
35
40
Pulse Width - Seconds
45
40
0.01
16
14
12
10
45
40
35
30
25
20
15
10
8
6
4
2
0
5
0
200
0
V
I
I
T
R
dv / dt < 10V / ns
IXGA20N120A3 IXGP20N120A3
C
G
CE
300
J
G
= 20A
= 10 mA
5
= 125ºC
= 600V
= 10Ω
Fig. 10. Reverse-Bias Safe Operating Area
400
10
0.1
500
15
Fig. 8. Gate Charge
Q
600
20
G
- NanoCoulombs
V
CE
700
25
- Volts
800
30
IXGH20N120A3
1
900
35
1000
40
1100
45
1200
50
10