IXGA30N120B3 IXYS SEMICONDUCTOR, IXGA30N120B3 Datasheet - Page 6

• Manufacturer Part Number: IXGA30N120B3
• Description: IGBT,1200V,30A,TO-263
• Manufacturer: IXYS SEMICONDUCTOR

Specifications of IXGA30N120B3

• Transistor Type: IGBT
• Dc Collector Current: 60A
• Collector Emitter Voltage Vces: 3.5V
• Power Dissipation Max: 300W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -55°C To +150°C
• Transistor: RoHS Compliant
• Transistor Case Style: TO-263
• Rohs Compliant: Yes
• Power Dissipation Pd: 300W

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
180
160
140
120
100
130
110
80
60
40
20
90
70
50
30
10
0
25
5
t
R
V
t
T
V
r
r
J
G
CE
35
CE
7
Switching Times vs. Junction Temperature
= 125ºC, V
= 5Ω , V
= 960V
= 960V
Switching Times vs. Gate Resistance
45
9
GE
t
d(on)
t
GE
Fig. 20. Inductive Turn-on
Fig. 18. Inductive Turn-on
d(on)
= 15V
11
55
= 15V
- - - -
T
- - - -
J
- Degrees Centigrade
I
13
R
65
C
G
= 30A
- Ohms
I
C
75
15
= 60A
85
17
I
C
= 60A
95
19
I
C
= 30A
105
21
115
23
125
25
26
24
22
20
18
16
14
50
46
42
38
34
30
26
22
18
14
110
100
90
80
70
60
50
40
30
20
10
0
15
R
V
t
20
IXGA30N120B3 IXGP30N120B3
r
CE
G
= 5Ω , V
Switching Times vs. Collector Current
= 960V
25
GE
t
Fig. 19. Inductive Turn-on
d(on)
= 15V
30
- - - -
T
J
35
= 125ºC, 25ºC
I
C
- Amperes
40
IXGH30N120B3
45
50
IXYS REF: G_30N120B3(4A)10-06-09-A
55
60
30
28
26
24
22
20
18
16
14
12
10
8