IXGH36N60B3C1 IXYS SEMICONDUCTOR, IXGH36N60B3C1 Datasheet - Page 3

• Manufacturer Part Number: IXGH36N60B3C1
• Description: IGBT,600V,36A,TO-247
• Manufacturer: IXYS SEMICONDUCTOR

Specifications of IXGH36N60B3C1

• Transistor Type: IGBT
• Dc Collector Current: 75A
• Collector Emitter Voltage Vces: 1.8V
• Power Dissipation Max: 250W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -55°C To +150°C
• Transistor: RoHS Compliant
• Transistor Case Style: TO-247
• Rohs Compliant: Yes
• Power Dissipation Pd: 250W

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3.8
3.4
3.0
2.6
2.2
1.8
1.4
1.0
60
50
40
30
20
10
60
50
40
30
20
10
0
0
0.0
0.0
4
5
0.4
0.4
6
Fig. 5. Collector-to-Emitter Voltage
Fig. 3. Output Characteristics
Fig. 1. Output Characteristics
7
vs. Gate-to-Emitter Voltage
I
C
0.8
0.8
= 60A
15A
30A
8
V
V
V
CE
CE
GE
@ 125ºC
9
- Volts
- Volts
@ 25ºC
- Volts
1.2
1.2
V
10
GE
V
= 15V
GE
13V
11V
9V
= 15V
11
13V
11V
9V
1.6
1.6
12
7V
5V
7V
5V
T
J
13
2.0
2.0
= 25ºC
14
2.4
2.4
15
300
250
200
150
100
1.40
1.30
1.20
1.10
1.00
0.90
0.80
240
200
160
120
50
80
40
0
0
-50
0
3
V
GE
V
-25
GE
= 15V
2
4
= 15V
Fig. 2. Extended Output Characteristics
13V
11V
Fig. 4. Dependence of V
0
4
5
Fig. 6. Input Admittance
Junction Temperature
T
9V
7V
5V
J
25
- Degrees Centigrade
IXGH36N60B3C1
V
CE
6
V
6
GE
@ 25ºC
- Volts
- Volts
50
8
7
T
J
75
= - 40ºC
125ºC
CE(sat)
I
I
I
25ºC
C
C
C
= 60A
= 30A
= 15A
10
8
100
on
12
9
125
150
14
10