IXGH48N60B3C1 IXYS SEMICONDUCTOR, IXGH48N60B3C1 Datasheet - Page 4

• Manufacturer Part Number: IXGH48N60B3C1
• Description: IGBT,600V,48A,TO-247
• Manufacturer: IXYS SEMICONDUCTOR

Specifications of IXGH48N60B3C1

• Transistor Type: IGBT
• Dc Collector Current: 75A
• Collector Emitter Voltage Vces: 1.8V
• Power Dissipation Max: 300W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -55°C To +150°C
• Transistor: RoHS Compliant
• Transistor Case Style: TO-247
• Rohs Compliant: Yes
• Power Dissipation Pd: 300W

IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
10,000
1,000
1.00
0.10
0.01
100
0.00001
80
70
60
50
40
30
20
10
10
0
0
0
f
= 1 MHz
5
20
10
40
Fig. 7. Transconductance
0.0001
T
Fig. 9. Capacitance
15
J
I
= - 40ºC
C
60
- Amperes
V
CE
25ºC
- Volts
20
125ºC
80
Fig. 11. Maximum Transient Thermal Impedance for IGBT
25
C oes
C res
C ies
100
0.001
30
120
35
Pulse Width - Seconds
140
40
0.01
140
120
100
80
60
40
20
16
14
12
10
8
6
4
2
0
0
100
0
V
I
I
T
R
dV / dt < 10V / ns
C
G
CE
J
G
= 40A
= 10mA
= 125ºC
= 5Ω
= 300V
Fig. 10. Reverse-Bias Safe Operating Area
20
200
0.1
40
Fig. 8. Gate Charge
300
Q
IXGH48N60B3C1
G
V
- NanoCoulombs
CE
- Volts
60
400
1
80
500
IXYS REF: G_48N60B3C1(5D)6-03-09
100
600
10
120