IXDR30N120 IXYS SEMICONDUCTOR, IXDR30N120 Datasheet
IXDR30N120
Manufacturer Part Number
IXDR30N120
Description
IGBT TRANSISTOR
Manufacturer
IXYS SEMICONDUCTOR
Datasheet
1.IXDR30N120.pdf
(4 pages)
Specifications of IXDR30N120
Dc Collector Current
50A
Collector Emitter Voltage Vces
2.4V
Power Dissipation Pd
200W
Collector Emitter Voltage V(br)ceo
1.2kV
Operating Temperature Range
-55°C To +150°C
Transistor Type
IGBT
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXDR30N120D1
Manufacturer:
FSC
Quantity:
7 000
High Voltage IGBT
with optional Diode
ISOPLUS
(Electrically Isolated Back Side)
Short Circuit SOA Capability
Square RBSOA
Symbol
V
V
V
V
I
I
I
RBSOA
t
(SCSOA)
P
T
T
V
Weight
© 2006 IXYS All rights reserved
Symbol
V
V
I
I
V
IXYS reserves the right to change limits, test conditions and dimensions
C25
C90
CM
SC
CES
GES
J
stg
CES
CGR
GES
GEM
C
ISOL
(BR)CES
GE(th)
CE(sat)
Conditions
T
T
Continuous
Transient
T
T
T
V
Clamped inductive load, L = 30 mH
V
R
T
50/60 Hz, RMS I
Conditions
V
I
V
V
I
C
C
J
J
C
C
C
C
GE
GE
G
GE
CE
CE
= 1 mA, V
= 30 A, V
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 90°C
= 90°C, t
= 25°C
= 47 Ω, non repetitive
= ±15 V, T
= ±15 V, V
= V
= 0 V, V
= 0 V
TM
CES
, T
package
p
GE
T
GE
CE
= 1 ms
J
J
= 15 V
J
CE
= V
= ± 20 V
= 25°C
= 125°C
= 125°C, R
= V
ISOL
GE
CES
< 1 mA
IGBT
Diode
GE
, T
= 20 kΩ
J
G
= 125°C
= 47 Ω
G
IXDR 30N120
(T
J
= 25°C, unless otherwise specified)
E
C
1200
min.
4.5
Characteristic Values
Maximum Ratings
typ.
2.5
2.4
IXDR 30N120 D1
-55 ... +150
-55 ... +150
V
CEK
I
CM
G
< V
max.
± 500
1200
1200
2500
= 50
±20
±30
200
6.5
1.5 mA
2.9
CES
50
30
60
10
95
6
C
E
mA
V~
°C
°C
nA
µs
W
W
V
V
V
V
A
A
A
A
g
V
V
V
V
I
V
Features
•
•
•
Advantages
•
• Meets TO-247AD package Outline
• Package for clip or spring mounting
• Space savings
• High power density
Typical Applications
• AC motor speed control
• DC servo and robot drives
• DC choppers
• Uninteruptible power supplies (UPS)
• Switch-mode and resonant-mode
ISOPLUS 247
G = Gate
C25
NPT IGBT technology
- high switching speed
- low switching losses
- square RBSOA, no latch up
- high short circuit capability
- positive temperature coefficient for
- MOS input, voltage controlled
- fast recovery epitaxial diode
Epoxy meets UL 94V-0
Isolated and UL registered E153432
DCB Isolated mounting tab
power supplies
CES
CE(sat) typ
easy paralleling
E153432
IXDR 30N120 D1
IXDR 30N120
C = Collector
= 1200 V
=
=
G
TM
C
E
2.4 V
50 A
Isolated Backside*
E = Emitter
1 - 4
Related parts for IXDR30N120
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
IGBT Chip, High Speed, Low Saturation Voltage IGBT with optional Diode
Manufacturer:
IXYS Corporation
Part Number:
Description:
Discrete Semiconductor Modules 1000 Amps 100V
Manufacturer:
IXYS
Datasheet:
Part Number:
Description:
Discrete Semiconductor Modules 300 Amps 1200V
Manufacturer:
IXYS
Datasheet:
Part Number:
Description:
Discrete Semiconductor Modules 450 Amps 1200V
Manufacturer:
IXYS
Datasheet:
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
IXYS
Datasheet:
Part Number:
Description:
Discrete Semiconductor Modules 1500 Amps 75V
Manufacturer:
IXYS
Datasheet:
Part Number:
Description:
Discrete Semiconductor Modules 300 Amps 1200V
Manufacturer:
IXYS
Datasheet:
Part Number:
Description:
Discrete Semiconductor Modules 225 Amps 1200V
Manufacturer:
IXYS
Datasheet:
Part Number:
Description:
DIODE MODULE EPITAXIAL 600V 95A
Manufacturer:
IXYS
Datasheet:
Part Number:
Description:
MODULE IGBT CBI E1
Manufacturer:
IXYS
Datasheet:
Part Number:
Description:
MODULE IGBT CBI E2
Manufacturer:
IXYS
Datasheet:
Part Number:
Description:
MOSFET N-CH 100V 1245A Y3-LI
Manufacturer:
IXYS
Datasheet:
Part Number:
Description:
THYRISTOR DIODE MODULE
Manufacturer:
IXYS
Datasheet:
Part Number:
Description:
FAST RECTIFIER, DUAL, 123A SOT-227B
Manufacturer:
IXYS SEMICONDUCTOR
Datasheet:
Part Number:
Description:
FAST RECTIFIER, DUAL, 96A, SOT-227B
Manufacturer:
IXYS SEMICONDUCTOR
Datasheet:
IXDR30N120 Summary of contents
Page 1
High Voltage IGBT with optional Diode TM ISOPLUS package (Electrically Isolated Back Side) Short Circuit SOA Capability Square RBSOA Symbol Conditions 25°C to 150°C CES 25°C to 150°C; R CGR J V Continuous ...
Page 2
Symbol Conditions C ies MHz oes res d(on Inductive ...
Page 3
T = 25° 0.0 0.5 1.0 1.5 2.0 V Fig. 1 Typ. output characteristics 20V 25° ...
Page 4
... Fig.10 Typ. turn off energy and switching times versus gate resistor 10 1 single pulse 0.001 0.01 t Fig. 12 Typ. transient thermal impedance 600 E off ns 500 t d(off) t 400 = 600V 300 CE = ±15V GE = 47Ω 200 G = 125°C J 100 1500 ns 1200 E off t 900 600 300 Ω 200 240 diode IGBT IXDR30N120 0 ...