IXFH18N90P IXYS SEMICONDUCTOR, IXFH18N90P Datasheet - Page 5

• Manufacturer Part Number: IXFH18N90P
• Description: MOSFET,N CH,900V,18A,TO-247
• Manufacturer: IXYS SEMICONDUCTOR

Specifications of IXFH18N90P

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 900V
• On Resistance Rds(on): 600mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 30V
• Operating Temperature Range: -55°C To +150°C
• Transistor Case: RoHS Compliant
• Transistor Case Style: TO-247
• Rohs Compliant: Yes

© 2009 IXYS CORPORATION, All Rights Reserved
TO-247 (IXFH) Outline
TO-268 (IXFT) Outline
Terminals: 1 - Gate
Dim.
A
A
A
b
b
b
C
D
E
e
L
L1
∅P
Q
R
S
1
2
1
2
1
20.80
15.75
19.81
1.65
2.87
5.20
3.55
5.89
4.32
6.15 BSC
Min.
4.7
2.2
2.2
1.0
Millimeter
2
3 - Source
.4
3
21.46
16.26
20.32
Max.
2.54
2.13
3.12
5.72
4.50
3.65
6.40
5.49
5.3
2.6
1.4
.8
∅ P
0.205 0.225
0.232 0.252
2 - Drain
Tab - Drain
.185
.087
.059
.040
.065
.113
.016
.819
.610
.780
.140
.170
Min.
242 BSC
Inches
Max.
.209
.102
.098
.055
.084
.123
.031
.845
.640
.800
.177
.144
.216
L1
2X e
PLUS220SMD (IXFV_S) Outline
PLUS220 (IXFV) Outline
A
A1
A2
b
c
D
D1
E
E1
e
L
L1
L2
L3
E1
E
IXFH18N90P IXFV18N90P
IXFT18N90P IXFV18N90PS
3X b
L
D
Terminals: 1-Gate 2-Drain
L2
L3
c
A2
A1
A
E1
D1
IXYS REF: F_18N90P(76)9-11-09-A