BUK6217-55C NXP Semiconductors, BUK6217-55C Datasheet - Page 4

• Manufacturer Part Number: BUK6217-55C
• Description: MOSFET,N CH,55V,31A,SOT428
• Manufacturer: NXP Semiconductors

Specifications of BUK6217-55C

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 55V
• On Resistance Rds(on): 16mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 16V
• Operating Temperature Range: -55°C To +175°C
• Transistor Case: RoHS Compliant
• Transistor Case Style: D-PAK
• Rohs Compliant: Yes

NXP Semiconductors
BUK6217-55C
Product data sheet
Fig 1.
Fig 3.
(A)
I
D
(A)
10
I
10
10
D
10
50
40
30
20
10
-1
3
2
1
0
10
mounting base temperature
Continuous drain current as a function of
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
0
-1
50
100
Limit R
1
150
DSon
All information provided in this document is subject to legal disclaimers.
T
003aae797
= V
mb
(°C)
DS
/ I
200
Rev. 02 — 4 October 2010
D
10
Fig 2.
DC
P
(%)
der
120
N-channel TrenchMOS intermediate level FET
80
40
0
function of mounting base temperature
Normalized total power dissipation as a
0
50
10
2
t
100 μ s
10 ms
1 ms
100 ms
p
= 10 μs
BUK6217-55C
100
V
DS
(V)
150
© NXP B.V. 2010. All rights reserved.
T
003aae798
mb
03na19
(°C)
10
200
3
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