BUK6217-55C NXP Semiconductors, BUK6217-55C Datasheet - Page 5

• Manufacturer Part Number: BUK6217-55C
• Description: MOSFET,N CH,55V,31A,SOT428
• Manufacturer: NXP Semiconductors

Specifications of BUK6217-55C

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 55V
• On Resistance Rds(on): 16mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 16V
• Operating Temperature Range: -55°C To +175°C
• Transistor Case: RoHS Compliant
• Transistor Case Style: D-PAK
• Rohs Compliant: Yes

NXP Semiconductors
5. Thermal characteristics
Table 5.
BUK6217-55C
Product data sheet
Symbol
R
Fig 4.
th(j-mb)
Z
(K/W)
th(j-mb)
10
10
10
-1
-2
1
10
Transient thermal impedance from junction to mounting base as a function of pulse duration
-6
single shot
δ = 0.5
Thermal characteristics
0.05
0.02
0.2
0.1
Parameter
thermal resistance from junction to
mounting base
10
-5
All information provided in this document is subject to legal disclaimers.
10
-4
Rev. 02 — 4 October 2010
Conditions
see
10
-3
Figure 4
N-channel TrenchMOS intermediate level FET
10
-2
BUK6217-55C
Min
-
10
P
-1
Typ
-
t
p
tp (s)
T
© NXP B.V. 2010. All rights reserved.
003aae795
δ =
Max
1.87
T
t
p
t
1
Unit
K/W
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