BUK6217-55C NXP Semiconductors, BUK6217-55C Datasheet - Page 9

• Manufacturer Part Number: BUK6217-55C
• Description: MOSFET,N CH,55V,31A,SOT428
• Manufacturer: NXP Semiconductors

Specifications of BUK6217-55C

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 55V
• On Resistance Rds(on): 16mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 16V
• Operating Temperature Range: -55°C To +175°C
• Transistor Case: RoHS Compliant
• Transistor Case Style: D-PAK
• Rohs Compliant: Yes

NXP Semiconductors
BUK6217-55C
Product data sheet
Fig 13. Gate charge waveform definitions
Fig 15. Input, output and reverse transfer capacitances
(pF)
C
10
10
10
10
4
3
2
10
as a function of drain-source voltage; typical
values
V
-2
V
V
V
GS(pl)
DS
GS(th)
GS
10
Q
GS1
-1
I
Q
D
GS
Q
GS2
1
Q
G(tot)
Q
GD
10
V
All information provided in this document is subject to legal disclaimers.
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003aae802
DS
(V)
C
C
C
oss
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iss
10
Rev. 02 — 4 October 2010
2
Fig 14. Gate-source voltage as a function of gate
Fig 16. Source (diode forward) current as a function of
V
(V)
(A)
I
GS
S
7.5
2.5
N-channel TrenchMOS intermediate level FET
10
60
45
30
15
5
0
0
charge; typical values
source-drain (diode forward) voltage; typical
values
0
0
0.3
10
T
j
14V
= 175 °C
BUK6217-55C
0.6
20
V
0.9
30
DS
© NXP B.V. 2010. All rights reserved.
= 44V
T
Q
003aae807
V
003aae804
j
SD
G
= 25 °C
(nC)
(V)
1.2
40
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