IXFH120N15P IXYS SEMICONDUCTOR, IXFH120N15P Datasheet
IXFH120N15P
Manufacturer Part Number
IXFH120N15P
Description
MOSFET, N, TO-247
Manufacturer
IXYS SEMICONDUCTOR
Datasheet
1.IXFH120N15P.pdf
(5 pages)
Specifications of IXFH120N15P
Transistor Polarity
N Channel
Continuous Drain Current Id
120A
Drain Source Voltage Vds
150V
On Resistance Rds(on)
16mohm
Rds(on) Test Voltage Vgs
10V
Voltage Vgs Max
20V
Operating Temperature Range
-55°C To
Threshold Voltage Vgs Typ
5V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXFH120N15P
Manufacturer:
SANYO
Quantity:
10 000
PolarHT
Power MOSFET
N-Channel Enhancement Mode
Avalanche Energy Rated
Fast Intrinsic Diode
Symbol
V
V
V
V
I
I
I
I
E
E
dv/dt
P
T
T
T
T
T
M
Weight
Symbol
(T
BV
V
I
I
R
© 2006 IXYS All rights reserved
D25
L(RMS)
DM
AR
GSS
DSS
J
JM
stg
L
DSS
DGR
DSS
GSM
AR
AS
D
SOLD
GS(th)
DS(on)
d
J
DSS
= 25 C, unless otherwise specified)
Test Conditions
T
T
Continuous
Transient
T
External lead current limit
T
T
T
T
I
T
T
1.6 mm (0.062 in.) from case for 10 s
Plastic case for 10 s
Mounting torque
TO-247
TO-268
Test Conditions
V
V
V
V
V
Pulse test, t 300 s, duty cycle d
S
V
J
J
C
C
C
C
C
J
C
GS
DS
GS
DS
GS
GS
= 25 C to 175 C
= 25 C to 175 C; R
= 25 C
= 25 C, pulse width limited by T
= 25 C
= 25 C
= 25 C
= 25 C
TM
= 0 V, I
= V
= 20 V
= V
= 0 V
= 10 V, I
150 C, R
I
DM
, di/dt
GS
DSS
HiPerFET
, I
D
D
DC
D
= 4 mA
= 250 A
, V
G
= 0.5 I
100 A/ s, V
= 4
DS
= 0
D25
(TO-3P)
GS
= 1 M
DD
T
J
= 175 C
V
DSS
IXFH 120N15P
IXFT 120N15P
JM
,
2 %
150
Min.
3.0
Characteristic Values
-55 ... +175
-55 ... +150
Maximum Ratings
Typ.
1.13/10 Nm/lb.in.
150
150
120
260
600
175
300
260
2.0
6.0
5.0
20
30
75
60
60
10
100
500
Max.
5.0
25
16
V/ns
m
mJ
nA
W
C
C
C
C
C
V
V
V
V
A
A
A
A
V
V
A
A
g
g
J
TO-247 (IXFH)
TO-268 (IXFT)
G = Gate
S = Source
Features
l
l
l
Advantages
l
l
l
International standard packages
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Easy to mount
Space savings
High power density
G
V
I
R
t
D25
rr
D
DS(on)
DSS
S
G
= 150
= 120
S
D = Drain
TAB = Drain
16 m
200 ns
DS99210E(12/05)
D (TAB)
D (TAB)
A
V
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IXFH120N15P Summary of contents
Page 1
PolarHT HiPerFET TM Power MOSFET N-Channel Enhancement Mode Avalanche Energy Rated Fast Intrinsic Diode Symbol Test Conditions 175 C DSS 175 C; R DGR J V Continuous ...
Page 2
Symbol Test Conditions 0 D25 C iss MHz oss rss t d(on ...
Page 3
Fig. 1. Output Characteristics @ 25 120 V = 10V GS 9V 100 0 Volts D S Fig. 3. Output Characteristics @ 150 120 V GS 100 ...
Page 4
Fig. 7. Input Adm ittance 210 180 150 120 90 º 150 º º - 4.5 5 5 Volts G S Fig. 9. Source Current ...
Page 5
...