IXFH24N80P IXYS SEMICONDUCTOR, IXFH24N80P Datasheet
IXFH24N80P
Manufacturer Part Number
IXFH24N80P
Description
MOSFET, N, TO-247
Manufacturer
IXYS SEMICONDUCTOR
Datasheet
1.IXFH24N80P.pdf
(4 pages)
Specifications of IXFH24N80P
Transistor Polarity
N Channel
Continuous Drain Current Id
24A
Drain Source Voltage Vds
800V
On Resistance Rds(on)
400mohm
Rds(on) Test Voltage Vgs
10V
Voltage Vgs Max
30V
Operating Temperature Range
-55°C To
Threshold Voltage Vgs Typ
5V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXFH24N80P
Manufacturer:
IXYS
Quantity:
15 500
PolarHV
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol
(T
BV
V
I
I
R
Symbol
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
M
Weight
T
T
GSS
DSS
D25
DM
AR
GS(th)
© 2006 IXYS All rights reserved
J
JM
stg
L
DS(on)
DSS
DGR
GSS
GSM
AR
AS
D
SOLD
d
J
DSS
= 25°C, unless otherwise specified)
Test Conditions
V
V
V
V
V
Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
Test Conditions
T
T
Continuous
Transient
T
T
T
T
T
I
T
T
Mounting torque (TO-247 & TO-264)
TO-247
TO-268
TO-264
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
V
S
GS
DS
GS
DS
GS
J
J
C
C
C
C
C
J
C
GS
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
= 25°C
≤ I
≤ 150°C, R
= 25°C
TM
= 0 V, I
= V
= ±30 V, V
= V
= 0 V
= 10 V, I
DM
GS
, di/dt ≤ 100 A/μs, V
DSS
HiPerFET
, I
D
D
D
= 250 μA
= 4 mA
= 0.5 I
G
DS
= 2 Ω
= 0 V
D25
GS
= 1 MΩ
DD
T
J
≤ V
= 125°C
DSS
JM
IXFH 24N80P
IXFK 24N80P
IXFT 24N80P
,
800
Min.
3.0
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
Typ.
1.13/10 Nm/lb.in.
800
800
±30
±40
650
150
300
260
1.5
24
55
12
50
10
10
6
5
1000
±100
400
Max.
5.0
25
V/ns
° C
° C
mΩ
mJ
nA
μA
μA
°C
°C
°C
W
g
g
g
V
V
V
V
V
V
A
A
A
J
V
I
R
t
TO-268 (IXFT) Case Style
G = Gate
S = Source
TO-247 (IXFH)
TO-264 AA (IXFK)
Features
Advantages
D25
rr
International standard packages
Fast recovery diode
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
DS(on)
DSS
Easy to mount
Space savings
High power density
G
D
G
G
S
D
≤ ≤ ≤ ≤ ≤ 400 mΩ Ω Ω Ω Ω
≤ ≤ ≤ ≤ ≤ 250 ns
=
= 800
S
D
Tab = Drain
S
24
= Drain
D (TAB)
DS99572E(07/06)
D (TAB)
(TAB)
A
V
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IXFH24N80P Summary of contents
Page 1
TM PolarHV HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions 25°C to 150°C DSS 25°C to 150°C; R DGR J V Continuous GSS V Transient GSM I ...
Page 2
Symbol Test Conditions 0 D25 C iss MHz oss rss t d(on ...
Page 3
Fig. 1. Output Characteristics @ 25º Volts DS Fig. 3. Output Characteristics @ 125º ...
Page 4
Fig. 7. Input Admittance 125ºC J 25º 40º 3 Volts GS Fig. 9. Forward Voltage Drop of Intrinsic Diode 36 32 ...