IXFH75N10 IXYS SEMICONDUCTOR, IXFH75N10 Datasheet
IXFH75N10
Manufacturer Part Number
IXFH75N10
Description
MOSFET, N, TO-247
Manufacturer
IXYS SEMICONDUCTOR
Datasheet
1.IXFH75N10.pdf
(4 pages)
Specifications of IXFH75N10
Transistor Polarity
N Channel
Continuous Drain Current Id
75A
Drain Source Voltage Vds
100V
On Resistance Rds(on)
20mohm
Rds(on) Test Voltage Vgs
10V
Voltage Vgs Max
20V
Operating Temperature Range
-55°C To
Threshold Voltage Vgs Typ
4V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXFH75N10
Manufacturer:
ON
Quantity:
10 000
Company:
Part Number:
IXFH75N10Q
Manufacturer:
IXYS
Quantity:
35 500
© 2000 IXYS All rights reserved
HiPerFET
Power MOSFETs
N-Channel Enhancement Mode
High dv/dt, Low t
Symbol
V
V
V
V
I
I
I
E
dv/dt
P
T
T
T
T
M
Weight
Symbol
V
V
I
I
R
IXYS reserves the right to change limits, test conditions, and dimensions.
D25
DM
AR
GSS
DSS
J
JM
stg
L
DGR
AR
D
DSS
GS
GSM
DSS
GS(th)
DS(on)
d
Test Conditions
T
T
Continuous
Transient
T
T
T
T
I
T
T
1.6 mm (0.062 in.) from case for 10 s
Mounting torque
Test Conditions
V
V
V
V
V
Pulse test, t £ 300 ms, duty cycle d £ 2 %
S
V
C
C
C
C
C
J
J
J
GS
DS
GS
DS
GS
GS
£ 150°C, R
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
£ I
= 25°C
= 0 V, I
= V
= ±20 V
= 0.8 • V
= 0 V
= 10 V, I
DM
TM
, di/dt £ 100 A/ms, V
GS
rr
, HDMOS
, I
D
D
DC
D
= 250 mA
DSS
= 4 mA
G
, V
= 0.5 I
= 2 W
DS
= 0
D25
TM
GS
= 1 MW
Family
DD
T
T
67N10
75N10
£ V
J
J
(T
= 25°C
= 125°C
DSS
J
= 25°C, unless otherwise specified)
JM
,
IXFH/IXFM 67 N10
IXFH/IXFM 75 N10
67N10
75N10
67N10
75N10
67N10
75N10
TO-204 = 18 g, TO-247 = 6 g
min.
100
2.0
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
typ.
1.13/10 Nm/lb.in.
100
100
±20
±30
268
300
300
150
300
67
75
67
75
30
5
0.025
0.020
max.
±100
250
4
1
V/ns
mA
mJ
nA
mA
°C
°C
°C
°C
W
W
W
V
V
V
V
A
A
A
A
A
A
V
V
TO-247 AD (IXFH)
TO-204 AE (IXFM)
G = Gate,
S = Source,
Features
Applications
Advantages
International standard packages
Low R
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Fast intrinsic Rectifier
AC motor control
DC-DC converters
Synchronous rectification
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
Temperature and lighting controls
Low voltage relays
Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
Space savings
High power density
100 V
100 V
t
V
rr
DSS
£ 200 ns
DS (on)
HDMOS
D
D = Drain,
TAB = Drain
67 A 25 mW
75 A 20 mW
I
D25
TM
G
process
91521F (10/95)
(TAB)
R
DS(on)
1 - 4
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IXFH75N10 Summary of contents
Page 1
TM HiPerFET Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low t , HDMOS rr Symbol Test Conditions 25°C to 150°C DSS 25°C to 150°C; R DGR J V Continuous GS V Transient GSM ...
Page 2
Symbol Test Conditions pulse test D25 C iss MHz oss rss t d(on) ...
Page 3
Fig. 1 Output Characteristics 200 T = 25°C J 150 100 50 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5 Volts DS Fig vs. Drain Current DS(on) 1 25°C J ...
Page 4
Fig.7 Gate Charge Characteristic Curve 50V 37. 1mA 100 125 150 175 200 Gate Charge - ...