IXFK90N20 IXYS SEMICONDUCTOR, IXFK90N20 Datasheet - Page 4

• Manufacturer Part Number: IXFK90N20
• Description: MOSFET, N, TO-264
• Manufacturer: IXYS SEMICONDUCTOR

Specifications of IXFK90N20

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 90A
• Drain Source Voltage Vds: 200V
• On Resistance Rds(on): 23mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To
• Threshold Voltage Vgs Typ: 4V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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0.01
100
0.1
0.5
14
12
10
80
60
40
20
0.001
8
6
4
2
0
0
0.4
0
Fig.7 Gate Charge Characteristic Curve
Fig.9 Source Current vs. Source
Fig.10 Transient Thermal Impedance
V
I
I
D
G
DS
= 50A
= 10mA
50
= 100V
to Drain Voltage
Gate Charge - nCoulombs
100 150 200 250 300 350 400
0.6
T
J
= 125°C
V
SD
0.8
- Volts
T
J
= 25°C
1.0
0.01
1.2
Pulse Width - Seconds
IXFK100N20
9000
8000
7000
6000
5000
4000
3000
2000
1000
0
Fig.8 Capacitance Curves
0
0.1
IXFN90N20
5
f = 1MHz
V
DS
= 25V
10
V
DS
- Volts
C
C
C
oss
iss
rss
15
IXFN106N20
20
25
1
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