IXFN150N15 IXYS SEMICONDUCTOR, IXFN150N15 Datasheet
IXFN150N15
Manufacturer Part Number
IXFN150N15
Description
MOSFET, N, SOT-227B
Manufacturer
IXYS SEMICONDUCTOR
Datasheet
1.IXFN150N15.pdf
(2 pages)
Specifications of IXFN150N15
Transistor Polarity
N Channel
Continuous Drain Current Id
150A
Drain Source Voltage Vds
150V
On Resistance Rds(on)
12.5mohm
Rds(on) Test Voltage Vgs
10V
Voltage Vgs Max
20V
Operating Temperature Range
-55°C
Threshold Voltage Vgs Typ
4V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXFN150N15
Manufacturer:
IXYS
Quantity:
200
© 2000 IXYS All rights reserved
HiPerFET
Power MOSFET
Single MOSFET Die
IXYS reserves the right to change limits, test conditions, and dimensions.
Preliminary data sheet
Symbol Test Conditions
V
V
V
V
I
I
I
I
E
E
dv/dt
P
T
T
T
T
V
M
Weight
Symbol
(T
V
V
I
I
R
D25
L(RMS)
DM
AR
GSS
DSS
J
JM
stg
L
DSS
DGR
GSM
AR
AS
D
GS
ISOL
DSS
GS(th)
d
DS(on)
J
= 25°C, unless otherwise specified)
T
T
T
T
Continuous
Transient
Terminal (current limit)
T
T
I
T
T
1.6 mm (0.063 in) from case for 10 s
50/60 Hz, RMS
I
Mounting torque
Terminal connection torque
V
V
V
V
V
V
Note 2
S
ISOL
C
C
C
C
C
J
J
J
GS
DS
GS
DS
GS
GS
T
= 25°C
= 25°C
= V
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C
= 25°C
£ I
£ 150°C, R
= 25°C
= 0 V, I
= ±20V, V
= 0 V
C
= 10V, I
= V
£ 1 mA
Test Conditions
DM
= 25°C; Note 1
DSS
GS
, di/dt £ 100 A/ms, V
, I
D
D
D
= 3mA
= 8mA
TM
= 0.5 • I
GS
G
= 0V
= 2 W
t = 1 min
t = 1 s
D25
GS
= 1MW
DD
£ V
DSS
T
T
J
J
= 25°C
= 125°C
IXFN 150N15
Min.
150
2
Characteristic Values
Typ.
-55 ... +150
-55 ... +150
Maximum Ratings
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
Max.
2500
3000
150
150
±20
±30
150
30
±100
150
100
600
150
600
300
60
12.5
100
3
5
2
4
V/ns
mJ
V~
V~
mW
°C
°C
°C
°C
mA
W
nA
mA
V
V
V
V
A
A
A
A
V
V
J
g
V
I
R
t
Features
·
·
·
·
·
·
·
·
Applications
·
·
·
·
·
·
·
Advantages
·
·
·
miniBLOC, SOT-227 B (IXFN)
G = Gate
S = Source
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
D25
rr
International standard package
Encapsulating epoxy meets
UL 94 V-0, flammability classification
miniBLOC with Aluminium nitride
isolation
Low R
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
Fast intrinsic Rectifier
DSS
DS(on)
DC-DC converters
Synchronous rectification
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
Temperature and lighting controls
Low voltage relays
Easy to mount
Space savings
High power density
£ 250 ns
E153432
DS (on)
= 150
= 150
= 12.5 mW
HDMOS
G
S
D = Drain
TM
D
process
V
A
98653 (9/99)
S
1 - 2
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IXFN150N15 Summary of contents
Page 1
TM HiPerFET Power MOSFET Single MOSFET Die Preliminary data sheet Symbol Test Conditions 25°C to 150°C DSS 25°C to 150° 1MW DGR Continuous GS V Transient GSM I ...
Page 2
Symbol Test Conditions (T = 25°C, unless otherwise specified 60A, Note iss MHz oss GS ...