IXFR180N15P IXYS SEMICONDUCTOR, IXFR180N15P Datasheet
IXFR180N15P
Manufacturer Part Number
IXFR180N15P
Description
MOSFET, N, ISOPLUS247
Manufacturer
IXYS SEMICONDUCTOR
Datasheet
1.IXFR180N15P.pdf
(5 pages)
Specifications of IXFR180N15P
Transistor Polarity
N Channel
Continuous Drain Current Id
100A
Drain Source Voltage Vds
150V
On Resistance Rds(on)
13mohm
Rds(on) Test Voltage Vgs
10V
Voltage Vgs Max
20V
Operating Temperature Range
-55°C
Threshold Voltage Vgs Typ
5V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
PolarHV
Power MOSFET
ISOPLUS247
(Electrically Isolated Back Surface)
Symbol
(T
V
V
I
I
R
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol
V
V
V
V
I
I
I
I
E
E
dv/dt
P
T
T
T
T
V
F
Weight
© 2006 IXYS All rights reserved
GSS
DSS
D25
D(RMS)
DM
AR
DSS
GS(th)
J
JM
stg
L
d
DS(on)
DSS
DGR
GSS
GSM
AR
AS
D
ISOL
J
= 25° C, unless otherwise specified)
Test Conditions
V
V
V
V
V
Test Conditions
T
T
Continuous
Transient
T
External Lead current limit
T
T
T
T
I
T
T
1.6 mm (0.062 in.) from case for 10 s
50/60 Hz, RMS, 1 minute
Mounting force
S
GS
DS
GS
DS
GS
J
J
C
C
C
C
C
J
C
= 25° C to 175° C
= 25° C to 175° C; R
= 25° C
= 25° C, pulse width limited by T
= 25° C
= 25° C
= 25° C
≤ I
≤ 150° C, R
= 25° C
TM
= 0 V, I
= V
= ±20 V
= V
= 10 V, I
DM
, di/dt ≤ 100 A/µs, V
GS
DSS,
HiPerFET
, I
D
D
DC
V
TM
D
= 4 mA
= 250 µA
GS
, V
= I
G
= 0 V
= 4 Ω
DS
T
, Note 1
= 0
GS
= 1 MΩ
DD
T
J
≤ V
= 150° C
DSS
JM
,
IXFR 180N15P V
20..120 / 4.5..26
150
Min.
2.5
Characteristic Values
-55 ... +175
-55 ... +150
Maximum Ratings
Typ.
2500
150
150
±20
±30
100
380
100
300
175
300
75
60
10
4
5
±100
Max.
5.0
1.5
25
13
V/ns
N/lb
mA
mΩ
°C
mJ
nA
µA
V~
°C
°C
°C
W
V
V
V
V
V
V
A
A
A
A
g
J
Features
l
l
l
l
l
l
Advantages
l
l
l
ISOPLUS247 (IXFR)
G = Gate
S = Source
R
I
International standard isolated
UL recognized package
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
package
Fast intrinsic diode
Easy to mount
Space savings
High power density
D25
DSS
G
DS(on)
t
D
rr
E153432
S
= 150
= 100
≤ ≤ ≤ ≤ ≤ 13
≤ ≤ ≤ ≤ ≤ 200 ns
D = Drain
ISOLATED TAB
DS99242(01/06)
mΩ Ω Ω Ω Ω
A
V
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IXFR180N15P Summary of contents
Page 1
PolarHV HiPerFET TM Power MOSFET ISOPLUS247 TM (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions 25° 175° C DSS 25° 175° C; ...
Page 2
Symbol Test Conditions Notes iss MHz oss rss t ...
Page 3
Fig. 1. Output Char acte r is tics @ 25 180 V GS 160 140 120 100 0.4 0 olts D S Fig. 3. Output Char acte ris tics @ 150 ...
Page 4
Fig. 7. Input Adm ittance 250 225 200 175 150 125 100 º 150 C J º º - 4.5 5 5 olts G S ...
Page 5
IXYS All rights reserved Fig. 13. M axim um Trans ie nt The tance 0.001 0.01 Pulse Width -Seconds IXFR 180N15P 0 IXYS REF: T_180N15P ...