PSMN014-60LS NXP Semiconductors, PSMN014-60LS Datasheet - Page 2

• Manufacturer Part Number: PSMN014-60LS
• Description: MOSFET,N CH,60V,40A,QFN3333
• Manufacturer: NXP Semiconductors

Specifications of PSMN014-60LS

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 60V
• On Resistance Rds(on): 11mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To +150°C
• Transistor Case: RoHS Compliant
• Transistor Case Style: QFN
• Rohs Compliant: Yes

NXP Semiconductors
2. Pinning information
Table 2.
3. Ordering information
Table 3.
PSMN014-60LS
Product data sheet
Pin
1
2
3
4
5,6,7,8
mb
Type number
PSMN014-60LS
Symbol Description
S
S
S
G
D
D
Pinning information
Ordering information
source
source
source
gate
drain
mounting base; connected to
drain
Table 1.
QFN3333
Package
Name
Symbol
Dynamic characteristics
Q
Q
Avalanche ruggedness
E
DS(AL)S
GD
G(tot)
Quick reference data
Parameter
gate-drain charge V
total gate charge
non-repetitive
drain-source
avalanche energy
Description
plastic thermal enhanced very thin small outline package;
no leads; 8 terminals
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 18 August 2010
Simplified outline
SOT873-1 (QFN3333)
N-channel QFN3333 60 V 14 mΩ standard level MOSFET
Conditions
V
see
V
I
unclamped; R
D
…continued
GS
DS
GS
= 40 A; V
Transparent
Figure 14
= 10 V; I
= 30 V; see
= 10 V; T
8 7 6 5
1 2 3 4
top view
sup
D
j(init)
GS
= 15 A;
≤ 60 V;
Figure
= 50 Ω
= 25 °C;
13;
Graphic symbol
PSMN014-60LS
mbb076
G
Min
-
-
-
© NXP B.V. 2010. All rights reserved.
D
S
Typ
4.5
19.6 -
-
Version
SOT873-1
Max Unit
-
42
2 of 14
nC
nC
mJ