PSMN014-60LS NXP Semiconductors, PSMN014-60LS Datasheet - Page 7

• Manufacturer Part Number: PSMN014-60LS
• Description: MOSFET,N CH,60V,40A,QFN3333
• Manufacturer: NXP Semiconductors

Specifications of PSMN014-60LS

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 60V
• On Resistance Rds(on): 11mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To +150°C
• Transistor Case: RoHS Compliant
• Transistor Case Style: QFN
• Rohs Compliant: Yes

NXP Semiconductors
PSMN014-60LS
Product data sheet
Fig 9.
Fig 11. Normalized drain-source on-state resistance
V
GS(th)
(V)
a
2.4
1.6
1.2
0.8
0.4
5
4
3
2
1
0
2
0
-60
junction temperature
-60
factor as a function of junction temperature
Gate-source threshold voltage as a function of
0
0
max
min
typ
60
60
120
120
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003aae528
T
T
003aae486
j
j
(°C)
(°C)
180
180
Rev. 2 — 18 August 2010
N-channel QFN3333 60 V 14 mΩ standard level MOSFET
Fig 10. Sub-threshold drain current as a function of
Fig 12. Drain-source on-state resistance as a function
(mΩ)
R
(A)
I
10
10
10
10
10
10
D
DSon
60
45
30
15
−1
−2
−3
−4
−5
−6
0
gate-source voltage
of drain current; typical values
0
0
V
GS
15
(V) = 4.5
2
PSMN014-60LS
min
30
typ
4
45
max
© NXP B.V. 2010. All rights reserved.
V
GS
5.0
003aae477
003aae487
I
D
5.5
6.0
7.0
10
(V)
(A)
60
6
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