PSMN014-60LS NXP Semiconductors, PSMN014-60LS Datasheet - Page 8

• Manufacturer Part Number: PSMN014-60LS
• Description: MOSFET,N CH,60V,40A,QFN3333
• Manufacturer: NXP Semiconductors

Specifications of PSMN014-60LS

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 60V
• On Resistance Rds(on): 11mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To +150°C
• Transistor Case: RoHS Compliant
• Transistor Case Style: QFN
• Rohs Compliant: Yes

NXP Semiconductors
PSMN014-60LS
Product data sheet
Fig 13. Gate charge waveform definitions
Fig 15. Input, output and reverse transfer capacitances
(pF)
C
10
10
10
10
4
3
2
10
as a function of drain-source voltage; typical
values
V
-2
V
V
V
GS(pl)
DS
GS(th)
GS
10
Q
GS1
-1
I
Q
D
GS
Q
GS2
1
Q
G(tot)
Q
GD
10
All information provided in this document is subject to legal disclaimers.
V
003aaa508
003aae476
DS
(V)
C
C
C
rss
iss
oss
10
Rev. 2 — 18 August 2010
2
N-channel QFN3333 60 V 14 mΩ standard level MOSFET
Fig 14. Gate-source voltage as a function of gate
Fig 16. Source (diode forward) current as a function of
V
(V)
(A)
GS
I
S
10
50
40
30
20
10
8
6
4
2
0
0
charge; typical values
source-drain (diode forward) voltage; typical
values
0
0
5
0.3
12V
T
j
= 175 °C
PSMN014-60LS
10
48V
0.6
15
V
DS
0.9
= 30V
© NXP B.V. 2010. All rights reserved.
T
20
j
003aae479
003aae480
V
= 25 °C
Q
SD
G
(nC)
(V)
1.2
25
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