IXA12IF1200PC IXYS SEMICONDUCTOR, IXA12IF1200PC Datasheet - Page 6

• Manufacturer Part Number: IXA12IF1200PC
• Description: IGBT,1200V,20A,TO-263
• Manufacturer: IXYS SEMICONDUCTOR

Specifications of IXA12IF1200PC

• Transistor Type: IGBT
• Dc Collector Current: 20A
• Collector Emitter Voltage Vces: 2.1V
• Power Dissipation Max: 85W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -55°C To +150°C
• Transistor: RoHS Compliant
• Transistor Case Style: TO-263
• Rohs Compliant: Yes
• Power Dissipation Pd: 85W

IXYS reserves the right to change limits, conditions and dimensions.
© 2011 IXYS all rights reserved
I
[A]
[A]
[mJ]
RR
E
I
F
rec
0.6
0.5
0.4
0.3
0.2
0.1
24
20
16
12
20
15
10
8
4
0
5
0
200
200
0.0
Fig. 11 Typ. recovery energy E
Fig. 9 Typical peak reverse current
i F
T
V
. g
VJ
R
7
= 125°C
= 600 V
250
250
0.5
I
RR
T
T
T
VJ
VJ
y
versus di
p
= 125°C
= 25°C
f .
300
300
1.0
r o
w
di
di
T
V
a
F
F
VJ
R
d r
/dt [A/µs]
/dt [A/µs]
V
F
= 125°C
350
= 600 V
350
1.5
/dt (125°C)
F
c
h
[V]
r a
c a
400
400
2.0
e t
i r
i t s
rec
s c
450
450
2.5
vs. di
10 A
20 A
20 A
10 A
5 A
5 A
F
500
500
/dt (125°C)
3.0
Data according to IEC 60747and per diode unless otherwise specified
[ns]
t
rr
[µC]
Q
rr
500
400
300
200
100
2.4
2.0
1.6
1.2
0.8
0.4
0.0
0
200
200
Fig. 10 Typ. recovery time t
i F
. g
8
250
250
Q
T
rr
p y
versus. di
c i
300
300
a
r l
di
v e
di
F
20 A
10 A
F
IXA12IF1200HB
e
5 A
/dt [A/µs]
/dt [A/µs]
350
350
s r
F
/dt (125°C)
e
e r
c
400
400
v o
rr
e
vs. di/dt (125°C)
y r
T
V
T
V
VJ
VJ
R
R
c
= 125°C
= 125°C
= 600 V
= 600 V
450
450
h
a
preliminary
20 A
g r
10 A
5 A
e
20110330a
500
500