BLF878 NXP Semiconductors, BLF878 Datasheet - Page 11

• Manufacturer Part Number: BLF878
• Description: LDMOS,RF,300W,UHF,50V
• Manufacturer: NXP Semiconductors

Specifications of BLF878

• Transistor Type: RF MOSFET
• Drain Source Voltage Vds: 89V
• Continuous Drain Current Id: 7.6A
• Operating Frequency Range: 1.3GHz
• Rf Transistor Case: SOT-979A
• No. Of Pins: 4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NXP Semiconductors
BLF878_2
Product data sheet
7.5 Reliability
Table 8.
Simulated Z
f
MHz
925
950
975
1000
Fig 13. BLF878 electromigration (I
(10) T
(11) T
(1) T
(2) T
(3) T
(4) T
(5) T
(6) T
(7) T
(8) T
(9) T
Years
10
10
10
10
10
10
TTF (0.1 % failure fraction).
The reliability at pulsed conditions can be calculated as follows: TTF (0.1 %)
1
6
5
4
3
2
j
j
j
j
j
j
j
j
j
j
j
Typical push-pull impedance
i
= 100 C
= 110 C
= 120 C
= 130 C
= 140 C
= 150 C
= 160 C
= 170 C
= 180 C
= 190 C
= 200 C
0
and Z
L
device impedance; impedance info at V
4
Rev. 02 — 15 June 2009
Z
5.103 + j4.467
5.656 + j4.291
6.205 + j3.963
6.696 + j3.463
i
8
DS(DC)
…continued
, total device)
12
DS
16
= 42 V and P
UHF power LDMOS transistor
Z
3.706
3.556
3.415
3.281
L
20
j0.871
j1.011
j1.157
j1.308
I
L(PEP)
DS(DC)
(10)
(11)
© NXP B.V. 2009. All rights reserved.
001aai087
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
(9)
1 / .
BLF878
(A)
= 300 W.
24
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