BLF878 NXP Semiconductors, BLF878 Datasheet - Page 16

LDMOS,RF,300W,UHF,50V

BLF878

Manufacturer Part Number
BLF878
Description
LDMOS,RF,300W,UHF,50V
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BLF878

Transistor Type
RF MOSFET
Drain Source Voltage Vds
89V
Continuous Drain Current Id
7.6A
Operating Frequency Range
1.3GHz
Rf Transistor Case
SOT-979A
No. Of Pins
4
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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10. Abbreviations
11. Revision history
Table 11.
BLF878_2
Product data sheet
Document ID
BLF878_2
Modifications:
BLF878_1
Revision history
Release date
20090615
20081215
Table 10.
Acronym
CW
CCDF
DVB
DVB-T
ESD
IMD3
LDMOS
LDMOST
OFDM
PAL
PAR
PEP
RF
TTF
UHF
VSWR
Table 4 on page
Table 6 on page
Table 7 on page
Abbreviations
3: changed maximum value of V
3: changed several values.
4: removed PAR specification.
Data sheet status
Product data sheet
Preliminary data sheet
Rev. 02 — 15 June 2009
Description
Continuous Wave
Complementary Cumulative Distribution Function
Digital Video Broadcast
Digital Video Broadcast - Terrestrial
ElectroStatic Discharge
Third order InterModulation Distortion
Laterally Diffused Metal-Oxide Semiconductor
Laterally Diffused Metal-Oxide Semiconductor Transistor
Orthogonal Frequency Division Multiplexing
Phase Alternating Line
Peak-to-Average power Ratio
Peak Envelope Power
Radio Frequency
Time To Failure
Ultra High Frequency
Voltage Standing-Wave Ratio
GS
.
Change notice
-
-
UHF power LDMOS transistor
© NXP B.V. 2009. All rights reserved.
Supersedes
BLF878_1
-
BLF878
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