BLF878 NXP Semiconductors, BLF878 Datasheet - Page 9

• Manufacturer Part Number: BLF878
• Description: LDMOS,RF,300W,UHF,50V
• Manufacturer: NXP Semiconductors

Specifications of BLF878

• Transistor Type: RF MOSFET
• Drain Source Voltage Vds: 89V
• Continuous Drain Current Id: 7.6A
• Operating Frequency Range: 1.3GHz
• Rf Transistor Case: SOT-979A
• No. Of Pins: 4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NXP Semiconductors
BLF878_2
Product data sheet
Fig 9.
Fig 11. DVB-T PAR at 0.1 % and at 0.01 % probability on the CCDF as function of frequency; typical values
(dB)
G
(1) V
(2) V
(1) V
(2) V
p
22
18
14
10
400
P
source broadband test circuit as described in
DVB-T power gain and drain efficiency as
functions of frequency; typical values
P
PAR of input signal = 9.5 dB at 0.01 % probability on CCDF.
L(AV)
DS
DS
L(AV)
DS
DS
= 40 V
= 42 V
= 40 V
= 42 V
= 77 W; I
= 77 W; I
7.2.2 DVB-T
500
G
D
p
Dq
Dq
600
= 1.4 A; measured in a common
= 1.4 A; measured in a common source broadband test circuit as described in
700
(2)
(1)
(1)
(2)
PAR
(dB)
10
9
8
7
6
5
400
800
001aai083
f (MHz)
500
900
Rev. 02 — 15 June 2009
Section
60
40
20
0
(%)
D
600
8.
Fig 10. DVB-T third order intermodulation distortion
700
IMD3
(dBc)
(1) V
(2) V
20
40
60
0
400
P
source broadband test circuit as described in
as a function of frequency; typical values
800
L(AV)
DS
DS
001aai085
(2)
(1)
f (MHz)
= 40 V
= 42 V
= 77 W; I
500
900
Dq
600
= 1.4 A; measured in a common
UHF power LDMOS transistor
700
Section
(1)
(2)
8.
© NXP B.V. 2009. All rights reserved.
800
BLF878
001aai084
f (MHz)
900
Section
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8.