BLF878 NXP Semiconductors, BLF878 Datasheet - Page 2

• Manufacturer Part Number: BLF878
• Description: LDMOS,RF,300W,UHF,50V
• Manufacturer: NXP Semiconductors

Specifications of BLF878

• Transistor Type: RF MOSFET
• Drain Source Voltage Vds: 89V
• Continuous Drain Current Id: 7.6A
• Operating Frequency Range: 1.3GHz
• Rf Transistor Case: SOT-979A
• No. Of Pins: 4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NXP Semiconductors
2. Pinning information
3. Ordering information
BLF878_2
Product data sheet
1.3 Applications
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Table 2.
[1]
Table 3.
Pin
1
2
3
4
5
Type number Package
BLF878
Integrated ESD protection
Advanced flange material for optimum thermal behavior and reliability
Excellent ruggedness
High power gain
High efficiency
Designed for broadband operation (470 MHz to 860 MHz)
Excellent reliability
Internal input and output matching for high gain and optimum broadband operation
Easy power control
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
Communication transmitter applications in the UHF band
Industrial applications in the UHF band
Connected to flange.
Pinning
Ordering information
Description
drain1
drain2
gate1
gate2
source
Name Description
-
flanged LDMOST ceramic package; 2 mounting holes; 4 leads SOT979A
Rev. 02 — 15 June 2009
[1]
Simplified outline
1
3
2
4
UHF power LDMOS transistor
5
Graphic symbol
© NXP B.V. 2009. All rights reserved.
BLF878
3
4
1
2
Version
sym117
2 of 18
5