SQM85N15-19-GE3 Vishay, SQM85N15-19-GE3 Datasheet

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SQM85N15-19-GE3

Manufacturer Part Number
SQM85N15-19-GE3
Description
MOSFET,N CH,W DIODE,150V,85A,TO-263
Manufacturer
Vishay
Datasheet

Specifications of SQM85N15-19-GE3

Transistor Polarity
N Channel
Continuous Drain Current Id
85A
Drain Source Voltage Vds
150V
On Resistance Rds(on)
0.016ohm
Rds(on) Test Voltage Vgs
10V
Voltage Vgs Max
20V
Power Dissipation
RoHS Compliant
Power Dissipation Pd
375W
Rohs Compliant
Yes
Configuration
Single
Resistance Drain-source Rds (on)
0.019 Ohms
Drain-source Breakdown Voltage
150 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
85 A
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Package / Case
TO-263
Minimum Operating Temperature
- 55 C
Lead Free Status / Rohs Status
 Details
Notes
a. Package limited.
b. Pulse test; pulse width  300 μs, duty cycle  2 %.
c. When mounted on 1" square P.C.B. (Fr-4 material).
d. Parametric verification ongoing.
Document Number: 68668
S10-2105-Rev. C, 27-Sep-10
PRODUCT SUMMARY
V
R
I
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
ABSOLUTE MAXIMUM RATINGS (T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Source Current (Diode Conduction)
Pulsed Drain Currentb
Single Pulse Avalanche Energy
Single Pulse Avalanche Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Case (Drain)
D
DS
DS(on)
(A)
(V)
() at V
G
Top View
TO-263
GS
D
= 10 V
S
N-Channel 150 V (D-S) 175 °C MOSFET
b
G
N-Channel MOSFET
Single
0.019
150
85
a
C
= 25 °C, unless otherwise noted)
D
S
PCB Mount
T
T
L = 0.1 mH
T
T
Automotive
C
C
C
C
= 125 °C
= 125 °C
= 25 °C
= 25 °C
c
TO-263
SQM85N15-19-GE3
FEATURES
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• Package with Low Thermal Resistance
• Compliant to RoHS Directive 2002/95/EC
• AEC-Q101 Qualified
• Find out more about Vishay’s Automotive Grade Product
Definition
Requirements at:
SYMBOL
SYMBOL
T
R
R
J
V
V
E
I
I
P
, T
thJC
DM
thJA
I
I
AS
DS
GS
D
S
AS
D
stg
®
Power MOSFET
www.vishay.com/applications
d
- 55 to + 175
LIMIT
LIMIT
± 20
150
120
140
135
375
125
0.4
85
50
52
40
SQM85N15-19
Vishay Siliconix
www.vishay.com
UNIT
UNIT
°C/W
mJ
°C
W
A
V
1

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SQM85N15-19-GE3 Summary of contents

Page 1

... TrenchFET 85 • Package with Low Thermal Resistance Single • Compliant to RoHS Directive 2002/95/EC D • AEC-Q101 Qualified • Find out more about Vishay’s Automotive Grade Product Requirements at N-Channel MOSFET TO-263 SQM85N15-19-GE3 = 25 °C, unless otherwise noted) C SYMBOL ° 125 °C ...

Page 2

... SQM85N15-19 Vishay Siliconix SPECIFICATIONS ( °C, unless otherwise noted) C PARAMETER Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance b Forward Transconductance b Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance c Total Gate Charge ...

Page 3

... V - Drain-to-Source Voltage (V) DS Capacitance Document Number: 68668 S10-2105-Rev. C, 27-Sep- °C, unless otherwise noted) A 140 120 100 0.05 0.04 0.03 0.02 0. 100 SQM85N15-19 Vishay Siliconix ° 125 ° ° Gate-to-Source Voltage (V) GS Transfer Characteristics Drain Current (A) D On-Resistance vs. Drain Current ...

Page 4

... SQM85N15-19 Vishay Siliconix TYPICAL CHARACTERISTICS (T 3 2.5 2.0 1.5 1.0 0 Junction Temperature (°C) J On-Resistance vs. Junction Temperature 0.20 0.16 0.12 0.08 0. Gate-to-Source Voltage (V) GS On-Resistance vs. Gate-to-Source Voltage www.vishay.com °C, unless otherwise noted) A 100 0.1 0.01 0.001 100 125 150 175 1.0 0 ...

Page 5

... Limited by 100 R * DS(on °C 0.1 C Single Pulse BVDSS Limited 0.01 0.01 0 Drain-to-Source Voltage ( minimum V at which DS(on) Safe Operating Area - Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient SQM85N15-19 Vishay Siliconix 100 µ 100 ms 100 1000 is specified 10 100 www.vishay.com 1000 5 ...

Page 6

... SQM85N15-19 Vishay Siliconix THERMAL RATINGS ( °C, unless otherwise noted Duty Cycle = 0.5 0.2 0.1 0.05 0.1 0.02 Single Pulse 0. Note • The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction to Ambient (25 °C) - Normalized Transient Thermal Impedance Junction to Case (25 °C) are given for general guidelines only to enable the user to get a “ ...

Page 7

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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