SQM85N15-19-GE3 Vishay, SQM85N15-19-GE3 Datasheet - Page 6

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SQM85N15-19-GE3

Manufacturer Part Number
SQM85N15-19-GE3
Description
MOSFET,N CH,W DIODE,150V,85A,TO-263
Manufacturer
Vishay
Datasheet

Specifications of SQM85N15-19-GE3

Transistor Polarity
N Channel
Continuous Drain Current Id
85A
Drain Source Voltage Vds
150V
On Resistance Rds(on)
0.016ohm
Rds(on) Test Voltage Vgs
10V
Voltage Vgs Max
20V
Power Dissipation
RoHS Compliant
Power Dissipation Pd
375W
Rohs Compliant
Yes
Configuration
Single
Resistance Drain-source Rds (on)
0.019 Ohms
Drain-source Breakdown Voltage
150 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
85 A
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Package / Case
TO-263
Minimum Operating Temperature
- 55 C
Lead Free Status / Rohs Status
 Details
SQM85N15-19
Vishay Siliconix
THERMAL RATINGS (T
Note
• The characteristics shown in the two graphs
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?68668.
www.vishay.com
6
- Normalized Transient Thermal Impedance Junction to Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction to Case (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
0.01
0.1
2
1
10 -
4
0.2
0.1
Single Pulse
Duty Cycle = 0.5
0.02
0.05
A
= 25 °C, unless otherwise noted)
10 -
Normalized Thermal Transient Impedance, Junction-to-Case
3
Square Wave Pulse Duration (s)
10 -
2
10 -
1
S10-2105-Rev. C, 27-Sep-10
Document Number: 68668
1

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