SQM85N15-19-GE3 Vishay, SQM85N15-19-GE3 Datasheet - Page 3

no-image

SQM85N15-19-GE3

Manufacturer Part Number
SQM85N15-19-GE3
Description
MOSFET,N CH,W DIODE,150V,85A,TO-263
Manufacturer
Vishay
Datasheet

Specifications of SQM85N15-19-GE3

Transistor Polarity
N Channel
Continuous Drain Current Id
85A
Drain Source Voltage Vds
150V
On Resistance Rds(on)
0.016ohm
Rds(on) Test Voltage Vgs
10V
Voltage Vgs Max
20V
Power Dissipation
RoHS Compliant
Power Dissipation Pd
375W
Rohs Compliant
Yes
Configuration
Single
Resistance Drain-source Rds (on)
0.019 Ohms
Drain-source Breakdown Voltage
150 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
85 A
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Package / Case
TO-263
Minimum Operating Temperature
- 55 C
Lead Free Status / Rohs Status
 Details
TYPICAL CHARACTERISTICS (T
Document Number: 68668
S10-2105-Rev. C, 27-Sep-10
10 000
8000
6000
4000
2000
180
150
120
150
120
90
60
30
90
60
30
0
0
0
0
0
0
T
C
C
= 25 °C
rss
T
C
20
12
4
= - 55 °C
V
V
DS
DS
Output Characteristics
C
- Drain-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
Transconductance
oss
V
I
D
GS
Capacitance
- Drain Current (A)
40
24
= 10 V thru 7 V
8
T
C
C
V
iss
= 125 °C
GS
60
12
36
= 6 V
A
V
V
= 25 °C, unless otherwise noted)
GS
GS
80
16
48
= 4 V, 3 V
= 5 V
100
20
60
0.05
0.04
0.03
0.02
0.01
140
120
100
10
80
60
40
20
0
8
6
4
2
0
0
0
0
0
I
10
D
= 85 A
20
T
C
20
On-Resistance vs. Drain Current
2
= 125 °C
V
GS
T
Q
Transfer Characteristics
C
30
g
- Gate-to-Source Voltage (V)
= 25 °C
- Total Gate Charge (nC)
40
I
D
V
- Drain Current (A)
DS
40
Gate Charge
4
V
GS
= 75 V
SQM85N15-19
50
= 10 V
60
Vishay Siliconix
T
C
60
6
= - 55 °C
80
70
www.vishay.com
80
8
100
90
100
120
10
3

Related parts for SQM85N15-19-GE3