SQM85N15-19-GE3 Vishay, SQM85N15-19-GE3 Datasheet - Page 3

• Manufacturer Part Number: SQM85N15-19-GE3
• Description: MOSFET,N CH,W DIODE,150V,85A,TO-263
• Manufacturer: Vishay

Specifications of SQM85N15-19-GE3

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 85A
• Drain Source Voltage Vds: 150V
• On Resistance Rds(on): 0.016ohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Power Dissipation: RoHS Compliant
• Power Dissipation Pd: 375W
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 0.019 Ohms
• Drain-source Breakdown Voltage: 150 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 85 A
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: TO-263
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: Details

TYPICAL CHARACTERISTICS (T
Document Number: 68668
S10-2105-Rev. C, 27-Sep-10
10 000
8000
6000
4000
2000
180
150
120
150
120
90
60
30
90
60
30
0
0
0
0
0
0
T
C
C
= 25 °C
rss
T
C
20
12
4
= - 55 °C
V
V
DS
DS
Output Characteristics
C
- Drain-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
Transconductance
oss
V
I
D
GS
Capacitance
- Drain Current (A)
40
24
= 10 V thru 7 V
8
T
C
C
V
iss
= 125 °C
GS
60
12
36
= 6 V
A
V
V
= 25 °C, unless otherwise noted)
GS
GS
80
16
48
= 4 V, 3 V
= 5 V
100
20
60
0.05
0.04
0.03
0.02
0.01
140
120
100
10
80
60
40
20
0
8
6
4
2
0
0
0
0
0
I
10
D
= 85 A
20
T
C
20
On-Resistance vs. Drain Current
2
= 125 °C
V
GS
T
Q
Transfer Characteristics
C
30
g
- Gate-to-Source Voltage (V)
= 25 °C
- Total Gate Charge (nC)
40
I
D
V
- Drain Current (A)
DS
40
Gate Charge
4
V
GS
= 75 V
SQM85N15-19
50
= 10 V
60
Vishay Siliconix
T
C
60
6
= - 55 °C
80
70
www.vishay.com
80
8
100
90
100
120
10
3