SQM85N15-19-GE3 Vishay, SQM85N15-19-GE3 Datasheet - Page 2

• Manufacturer Part Number: SQM85N15-19-GE3
• Description: MOSFET,N CH,W DIODE,150V,85A,TO-263
• Manufacturer: Vishay

Specifications of SQM85N15-19-GE3

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 85A
• Drain Source Voltage Vds: 150V
• On Resistance Rds(on): 0.016ohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Power Dissipation: RoHS Compliant
• Power Dissipation Pd: 375W
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 0.019 Ohms
• Drain-source Breakdown Voltage: 150 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 85 A
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: TO-263
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: Details

SQM85N15-19
Vishay Siliconix
Notes
a. Pulse test; pulse width  300 μs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
SPECIFICATIONS (T
PARAMETER
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Diode Ratings and Characteristics
Pulsed Current
Forward Voltage
c
b
c
a
c
c
c
c
c
a
b
C
= 25 °C, unless otherwise noted)
a
SYMBOL
R
V
I
t
t
C
I
I
C
V
DS(on)
C
Q
Q
V
GS(th)
D(on)
d(off)
I
GSS
DSS
d(on)
g
Q
SM
t
t
DS
oss
SD
iss
rss
gs
gd
fs
r
f
g
b
V
V
V
V
V
V
V
V
V
GS
GS
GS
GS
GS
GS
GS
GS
GS
I
D
= 10 V
= 10 V
= 10 V
= 10 V
= 10 V
= 0 V
= 0 V
= 0 V
= 0 V
 85 A, V
V
V
V
V
DD
DS
V
TEST CONDITIONS
DS
GS
I
DS
F
= 75 V, R
= 0 V, V
= 85 A, V
= V
= 0 V, I
= 15 V, I
GEN
V
V
GS
DS
DS
I
I
V
V
D
D
DS
, I
DS
= 30 A, T
= 30 A, T
= 10 V, R
= 150 V, T
= 150 V, T
D
GS
D
= 25 V, f = 1 MHz
L
GS
= 75 V, I
= 250 μA
V
D
= 250 μA
= 0.88 
= ± 20 V
V
DS
I
= 30 A
D
= 0 V
DS
= 30 A
= 150 V
 5 V
J
J
g
J
J
= 125 °C
= 175 °C
D
= 1 
= 125 °C
= 175 °C
= 85 A
MIN.
150
120
2.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
S10-2105-Rev. C, 27-Sep-10
Document Number: 68668
0.016
TYP.
5026
450
165
3.0
0.9
79
80
33
12
17
24
35
11
-
-
-
-
-
-
-
-
-
MAX.
± 100
0.019
0.039
0.051
6285
300
565
205
120
140
3.5
1.0
1.5
50
26
36
53
17
-
-
-
-
-
UNIT
nC
nA
μA
pF
ns
A

S
A
V
V