SQM85N15-19-GE3 Vishay, SQM85N15-19-GE3 Datasheet - Page 4

• Manufacturer Part Number: SQM85N15-19-GE3
• Description: MOSFET,N CH,W DIODE,150V,85A,TO-263
• Manufacturer: Vishay

Specifications of SQM85N15-19-GE3

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 85A
• Drain Source Voltage Vds: 150V
• On Resistance Rds(on): 0.016ohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Power Dissipation: RoHS Compliant
• Power Dissipation Pd: 375W
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 0.019 Ohms
• Drain-source Breakdown Voltage: 150 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 85 A
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: TO-263
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: Details

SQM85N15-19
Vishay Siliconix
TYPICAL CHARACTERISTICS (T
www.vishay.com
4
0.20
0.16
0.12
0.08
0.04
3.0
2.5
2.0
1.5
1.0
0.5
0
- 50
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
- 25
I
D
= 30 A
2
V
0
GS
T
J
- Gate-to-Source Voltage (V)
- Junction Temperature (°C)
25
4
50
75
6
200
190
180
170
160
150
100
V
A
GS
Drain Source Breakdown vs. Junction Temperature
T
- 50
= 25 °C, unless otherwise noted)
J
= 10 V
T
= 150 °C
125
J
= 25 °C
8
I
- 25
D
= 10 mA
150
0
T
175
10
J
- Junction Temperature (°C)
25
50
75
100
0.001
- 0.5
- 1.0
- 1.5
- 2.0
- 2.5
0.01
100
0.1
1.0
0.5
10
1
0
- 50
125
0
- 25
150
Source Drain Diode Forward Voltage
0.2
T
J
175
= 150 °C
V
0
SD
- Source-to-Drain Voltage (V)
0.4
25
Threshold Voltage
T
J
- Temperature (°C)
50
0.6
75
S10-2105-Rev. C, 27-Sep-10
T
Document Number: 68668
I
J
D
0.8
= 25 °C
100
= 250 μA
125
1.0
I
D
= 5 mA
150
1.2
175