VS-GB50NA120UX Vishay, VS-GB50NA120UX Datasheet

TRANSISTOR,IGBT,1200V,50A,SOT227

VS-GB50NA120UX

Manufacturer Part Number
VS-GB50NA120UX
Description
TRANSISTOR,IGBT,1200V,50A,SOT227
Manufacturer
Vishay
Datasheet

Specifications of VS-GB50NA120UX

Transistor Type
IGBT
Dc Collector Current
84A
Collector Emitter Voltage Vces
3.22V
Power Dissipation Max
431W
Collector Emitter Voltage V(br)ceo
1.2kV
Operating Temperature Range
-40°C To
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Document Number: 93101
Revision: 22-Jul-10
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Collector to emitter voltage
Continuous collector current
Pulsed collector current
Clamped inductive load current
Diode continuous forward current
Gate to emitter voltage
Power dissipation, IGBT
Power dissipation, diode
RMS isolation voltage
V
CE(on)
typical at 50 A, 25 °C
I
V
C
CES
DC
SOT-227
DiodesAmericas@vishay.com, DiodesAsia@vishay.com,
For technical questions within your region, please contact one of the following:
"High Side Chopper" IGBT SOT-227
50 A at 92 °C
1200 V
3.22 V
(Ultrafast IGBT), 50 A
SYMBOL
V
V
V
I
I
P
P
CM
ISOL
CES
I
LM
I
GE
C
F
D
D
T
T
T
T
T
T
T
T
Any terminal to case, t = 1 min
C
C
C
C
C
C
C
C
= 25 °C
= 80 °C
= 25 °C
= 80 °C
= 25 °C
= 80 °C
= 25 °C
= 80 °C
TEST CONDITIONS
FEATURES
• NPT Generation V IGBT technology
• Square RBSOA
• HEXFRED
• Positive V
• Fully isolated package
• Speed 8 kHz to 60 kHz
• Very low internal inductance ( 5 nH typical)
• Industry standard outline
• UL approved file E78996
• Compliant to RoHS directive 2002/95/EC
BENEFITS
• Designed for increased operating efficiency in power
• Easy to assemble and parallel
• Direct mounting on heatsink
• Plug-in compatible with other SOT-227 packages
• Low EMI, requires less snubbing
conversion: UPS, SMPS, welding, induction heating
DiodesEurope@vishay.com
CE(on)
®
clamping diode
temperature coefficient
Vishay Semiconductors
MAX.
GB50NA120UX
1200
2500
± 20
150
150
431
242
278
156
84
57
76
52
www.vishay.com
UNITS
W
V
A
V
V
1

Related parts for VS-GB50NA120UX

VS-GB50NA120UX Summary of contents

Page 1

... Power dissipation, IGBT Power dissipation, diode RMS isolation voltage Document Number: 93101 For technical questions within your region, please contact one of the following: Revision: 22-Jul-10 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, (Ultrafast IGBT FEATURES • NPT Generation V IGBT technology • Square RBSOA • HEXFRED • Positive V • ...

Page 2

... Diode recovery charge Diode reverse recovery time Diode peak reverse current Diode recovery charge www.vishay.com For technical questions within your region, please contact one of the following: 2 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, "High Side Chopper" IGBT SOT-227 (Ultrafast IGBT °C unless otherwise specified) J SYMBOL TEST CONDITIONS ...

Page 3

... Mounting torque, 6- screw Weight 160 140 120 100 Continuous Collector Current (A) C Fig Maximum DC IGBT Collector Current vs. Case Temperature 1000 100 10 1 0.1 0. 100 V (V) CE Fig IGBT Reverse Bias SOA T = 150 ° Document Number: 93101 For technical questions within your region, please contact one of the following: Revision: 22-Jul-10 DiodesAmericas@vishay ...

Page 4

... I (mA) C Fig Typical IGBT Threshold Voltage 6 5 100 (°C) J Fig Typical IGBT Collector to Emitter Voltage vs. Junction Temperature, V 160 140 120 100 Continuous Forward Current (A) F Fig Maximum DC Forward Current vs. Case Temperature www.vishay.com For technical questions within your region, please contact one of the following: 4 DiodesAmericas@vishay ...

Page 5

... (Ω) g Fig Typical IGBT Energy Loss vs 125 ° 500 μ 600 1000 t d(off) t d(on 100 (Ω) g Fig Typical IGBT Switching Time vs 125 ° 500 μ Document Number: 93101 For technical questions within your region, please contact one of the following: Revision: 22-Jul-10 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, " ...

Page 6

... DC 0.001 0.00001 0.0001 www.vishay.com For technical questions within your region, please contact one of the following: 6 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, "High Side Chopper" IGBT SOT-227 (Ultrafast IGBT 0.01 0.001 0. Rectangular Pulse Duration (s) 1 Fig Maximum Thermal Impedance ...

Page 7

... Note: Due to the 50 V power supply, pulse width and inductor will increase to obtain Id Fig. 18a - Clamped Inductive Load Test Circuit Document Number: 93101 For technical questions within your region, please contact one of the following: Revision: 22-Jul-10 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, "High Side Chopper" IGBT SOT-227 (Ultrafast IGBT D.U. ce(max) Diode clamp/ D.U. ...

Page 8

... GB50NA120UX Vishay Semiconductors ORDERING INFORMATION TABLE Device code CIRCUIT CONFIGURATION Dimensions Packaging information www.vishay.com For technical questions within your region, please contact one of the following: 8 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, "High Side Chopper" IGBT SOT-227 (Ultrafast IGBT 120 Insulated Gate Bipolar Transistor (IGBT IGBT Generation 5 ...

Page 9

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

Related keywords