VS-GB50NA120UX Vishay, VS-GB50NA120UX Datasheet - Page 3

• Manufacturer Part Number: VS-GB50NA120UX
• Description: TRANSISTOR,IGBT,1200V,50A,SOT227
• Manufacturer: Vishay

Specifications of VS-GB50NA120UX

• Transistor Type: IGBT
• Dc Collector Current: 84A
• Collector Emitter Voltage Vces: 3.22V
• Power Dissipation Max: 431W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -40°C To
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Document Number: 93101
Revision: 22-Jul-10
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and
storage temperature range
Thermal resistance, junction to case
Thermal resistance, case to sink per module
Mounting torque, 6-32 or M3 screw
Weight
1000
160
140
120
100
0.01
100
80
60
40
20
0.1
10
0
1
Fig. 1 - Maximum DC IGBT Collector Current vs.
0
1
I
C
10
- Continuous Collector Current (A)
Fig. 2 - IGBT Reverse Bias SOA
20
10
T
J
= 150 °C, V
[e-mail], [e-mail],
30
Case Temperature
For technical questions within your region, please contact one of the following:
40
V
CE
100
(V)
50
GE
"High Side Chopper" IGBT SOT-227
= 15 V
60
Diode
IGBT
1000
70
80
(Ultrafast IGBT), 50 A
10 000
SYMBOL
T
90
R
R
J
, T
thJC
thCS
Stg
MIN.
- 40
-
-
-
-
-
0.0001
Fig. 4 - Typical IGBT Zero Gate Voltage Collector Current
[e-mail]
0.001
Fig. 3 - Typical IGBT Collector Current Characteristics
0.01
200
175
150
125
100
0.1
75
50
25
10
0
1
100
0
1
300
TYP.
0.05
30
Vishay Semiconductors
-
-
-
-
2
T
J
T
500
= 125 °C
J
3
= 25 °C
V
GB50NA120UX
V
CES
CE
4
700
(V)
(V)
MAX.
T
0.29
0.45
150
5
1.3
J
-
-
= 25 °C
T
900
J
= 125 °C
6
www.vishay.com
7
1100
UNITS
°C/W
Nm
°C
8
g
3