VS-GB50NA120UX Vishay, VS-GB50NA120UX Datasheet - Page 5

• Manufacturer Part Number: VS-GB50NA120UX
• Description: TRANSISTOR,IGBT,1200V,50A,SOT227
• Manufacturer: Vishay

Specifications of VS-GB50NA120UX

• Transistor Type: IGBT
• Dc Collector Current: 84A
• Collector Emitter Voltage Vces: 3.22V
• Power Dissipation Max: 431W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -40°C To
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Document Number: 93101
Revision: 22-Jul-10
1000
100
12
10
10
8
6
4
2
0
0
0
Fig. 12 - Typical IGBT Switching Time vs. R
Fig. 11 - Typical IGBT Energy Loss vs. R
t
T
f
t
J
T
d(off)
t
r
= 125 °C, L = 500 μH, V
J
= 125 °C, I
10
10
t
d(on)
V
CC
I
C
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= 50 A, V
= 600 V, V
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20
20
C
R
R
E
= 50 A, L = 500 μH,
g
g
on
(Ω)
(Ω)
GE
GE
E
30
30
= 15 V
Fig. 15 - Typical Q
"High Side Chopper" IGBT SOT-227
off
2650
2400
2150
1900
1650
1400
1150
= 15 V
900
650
400
CC
100
= 600 V,
40
40
(Ultrafast IGBT), 50 A
g
50
50
g
rr
T
Diode vs. dI
J
= 125 °C
dI
F
/dt (A/µs)
F
/dt, V
R
T
= 200 V, I
J
= 25 °C
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250
230
210
190
170
150
130
110
90
70
40
35
30
25
20
15
10
5
0
100
100
1000
F
= 50 A
Fig. 13 - Typical t
Fig. 14 - Typical I
T
J
Vishay Semiconductors
= 25 °C
V
V
T
T
R
R
J
J
= 125 °C
= 200 V, I
= 200 V, I
= 125 °C
dI
dI
F
F
/dt (A/µs)
/dt (A/µs)
GB50NA120UX
rr
rr
Diode vs. dI
Diode vs. dI
F
F
= 50 A
= 50 A
T
J
= 25 °C
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F
F
/dt
/dt
1000
1000
5