VS-GB50NA120UX Vishay, VS-GB50NA120UX Datasheet - Page 7

• Manufacturer Part Number: VS-GB50NA120UX
• Description: TRANSISTOR,IGBT,1200V,50A,SOT227
• Manufacturer: Vishay

Specifications of VS-GB50NA120UX

• Transistor Type: IGBT
• Dc Collector Current: 84A
• Collector Emitter Voltage Vces: 3.22V
• Power Dissipation Max: 431W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -40°C To
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Document Number: 93101
Revision: 22-Jul-10
50 V
* Driver same type as D.U.T.; V
* Note: Due to the 50 V power supply, pulse width and inductor
Fig. 18a - Clamped Inductive Load Test Circuit
will increase to obtain Id
1
1000 V
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For technical questions within your region, please contact one of the following:
1
2
3
V
I
C
C
C
= 80 % of V
5 %
L
V
10 %
90 %
C
"High Side Chopper" IGBT SOT-227
*
Fig. 19b - Switching Loss Waveforms Test Circuit
ce(max)
Diode clamp/
Fig. 19a - Switching Loss Test Circuit
D.U.T.
t
D.U.T.
(Ultrafast IGBT), 50 A
d(on)
- 5 V
-
2
+
R
g
10 %
t
r
E
on
E
D.U.T./
L
driver
ts
= (E
on
+ E
t
d(off)
90 %
off
Fig. 18b - Pulsed Collector Current Test Circuit
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)
+
-
V
CC
E
t
f
off
R
g
Vishay Semiconductors
t = 5 µs
D.U.T.
GB50NA120UX
R =
V
I
CM
CC
www.vishay.com
+
-
V
CC
7