VS-GB50NA120UX Vishay, VS-GB50NA120UX Datasheet - Page 2

• Manufacturer Part Number: VS-GB50NA120UX
• Description: TRANSISTOR,IGBT,1200V,50A,SOT227
• Manufacturer: Vishay

Specifications of VS-GB50NA120UX

• Transistor Type: IGBT
• Dc Collector Current: 84A
• Collector Emitter Voltage Vces: 3.22V
• Power Dissipation Max: 431W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -40°C To
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

GB50NA120UX
Vishay Semiconductors
www.vishay.com
2
ELECTRICAL SPECIFICATIONS (T
PARAMETER
Collector to emitter breakdown
voltage
Collector to emitter voltage
Gate threshold voltage
Temperature coefficient of
threshold voltage
Collector to emitter leakage current
Diode reverse breakdown voltage
Diode forward voltage drop
Diode reverse leakage current
Gate to emitter leakage current
SWITCHING CHARACTERISTICS (T
PARAMETER
Total gate charge (turn-on)
Gate to emitter charge (turn-on)
Gate to collector charge (turn-on)
Turn-on switching loss
Turn-off switching loss
Total switching loss
Turn-on switching loss
Turn-off switching loss
Total switching loss
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Reverse bias safe operating area
Diode reverse recovery time
Diode peak reverse current
Diode recovery charge
Diode reverse recovery time
Diode peak reverse current
Diode recovery charge
[e-mail], [e-mail],
For technical questions within your region, please contact one of the following:
V
SYMBOL
SYMBOL
V
RBSOA
GE(th)
V
V
"High Side Chopper" IGBT SOT-227
BR(CES)
t
t
I
I
Q
Q
E
E
CE(on)
V
V
E
E
E
E
d(on)
d(off)
GE(th)
I
Q
Q
Q
CES
GES
t
I
t
I
RM
t
t
BR
FM
on
off
tot
on
off
tot
rr
rr
rr
rr
ge
gc
r
f
rr
rr
g
/T
J
J
= 25 °C unless otherwise specified)
J
= 25 °C unless otherwise specified)
I
I
V
L = 500 μH, T
I
V
L = 500 μH, T
T
V
V
I
I
V
V
V
V
V
V
V
V
V
V
I
I
I
I
I
V
T
V
(Ultrafast IGBT), 50 A
C
C
C
F
F
R
C
C
C
C
GE
GE
J
GE
P
R
J
GE
GE
GE
GE
GE
CE
CE
GE
GE
R
GE
= 50 A, dI
= 50 A, dI
= 50 A, V
= 50 A, V
= 50 A, V
= 1 mA
= 25 A, V
= 50 A, V
= 25 A, V
= 50 A, V
= 150 °C, I
= 125 °C, V
= 1200 V
= 200 V, T
= V
= 15 V, R
= 15 V, R
= 15 V to 0 V, V
= V
= V
= 0 V, I
= 15 V, I
= 15 V, I
= 15 V, I
= 15 V, I
= 0 V, V
= 0 V, V
= ± 20 V
R
GE
GE
rated
TEST CONDITIONS
TEST CONDITIONS
, I
, I
CC
CC
CC
C
GE
GE
GE
GE
F
F
C
C
CE
CE
/dt = 200 A/μs, V
/dt = 200 A/μs,
C
C
C
C
C
J
= 1 mA
g
J
g
J
= 500 μA
= 1 mA (25 °C to 125 °C)
R
= 600 V, V
= 600 V,
= 600 V,
= 25 A
= 50 A
= 25 A, T
= 50 A, T
= 0 V
= 0 V
= 0 V, T
= 0 V, T
= 125 °C
= 5 
= 25 °C
= 5 
= 125 °C
= 150 A, R
= 1200 V
= 1200 V, T
= V
R
CC
rated
J
J
= 900 V,
J
J
= 125 °C
= 125 °C
GE
= 125 °C
= 125 °C
g
Energy losses
include tail and
diode recovery
(see fig. 18)
J
= 22 
= 15 V
= 125 °C
R
[e-mail]
= 200 V
MIN.
1200
1200
MIN.
4
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Fullsquare
TYP.
TYP.
1768
2.46
3.22
2.84
3.78
1.99
2.53
1.96
2.66
2.72
1.11
3.83
3.94
2.31
6.25
- 10
400
187
191
223
143
129
700
208
0.7
0.6
43
53
11
17
5
6
4
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Document Number: 93101
MAX.
± 200
Revision: 22-Jul-10
MAX.
1046
2698
2.80
3.60
2.42
3.00
2.30
3.08
161
257
3.0
2.0
50
50
14
21
4
3
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UNITS
UNITS
mV/°C
mA
mA
mJ
μA
μA
nA
nC
nC
nC
ns
ns
ns
V
V
V
A
A