BLF6G10LS-160RN:11 NXP Semiconductors, BLF6G10LS-160RN:11 Datasheet - Page 8

BLF6G10LS-160RN/LDMOST/REEL13/

BLF6G10LS-160RN:11

Manufacturer Part Number
BLF6G10LS-160RN:11
Description
BLF6G10LS-160RN/LDMOST/REEL13/
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BLF6G10LS-160RN:11

Transistor Type
LDMOS
Frequency
922.5MHz
Gain
22.5dB
Voltage - Rated
65V
Current Rating
39A
Current - Test
1.2A
Voltage - Test
32V
Power - Output
32W
Package / Case
SOT502B
Channel Type
N
Channel Mode
Enhancement
Continuous Drain Current
39A
Drain Source Voltage (max)
65V
Output Power (max)
32W
Power Gain (typ)@vds
22.5@32VdB
Frequency (min)
920MHz
Frequency (max)
960MHz
Package Type
LDMOST
Pin Count
3
Forward Transconductance (typ)
13.5S
Drain Source Resistance (max)
70(Typ)@6.15Vmohm
Reverse Capacitance (typ)
4.2@32VpF
Operating Temp Range
-65C to 225C
Drain Efficiency (typ)
27%
Mounting
Surface Mount
Mode Of Operation
2-Carrier W-CDMA
Number Of Elements
1
Vswr (max)
10
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / Rohs Status
Compliant
Other names
934063282118
NXP Semiconductors
Fig 9.
BLF6G10-160RN_10LS-160RN_2
Product data sheet
Earless flanged LDMOST ceramic package; 2 leads
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
inches
UNIT
mm
Package outline SOT502B
VERSION
OUTLINE
SOT502B
0.186
0.135
4.72
3.43
A
12.83
12.57
0.505
0.495
b
H
0.006
0.003
0.15
0.08
c
U 2
L
A
IEC
20.02
19.61
0.788
0.772
D
19.96
19.66
0.786
0.774
D 1
0.374
0.366
9.50
9.30
JEDEC
E
U 1
D 1
D
b
0.375
0.364
9.53
9.25
REFERENCES
E 1
Rev. 02 — 21 January 2010
3
1
2
0.045
0.035
1.14
0.89
0
F
19.94
18.92
0.785
0.745
JEITA
scale
H
w 2
5
D
M
F
0.210
0.170
5.33
4.32
D
10 mm
L
M
0.067
0.057
1.70
1.45
Q
BLF6G10(LS)-160RN
20.70
20.45
0.815
0.805
U 1
0.390
0.380
9.91
9.65
U 2
E 1
PROJECTION
0.010
EUROPEAN
0.25
w 2
c
Q
Power LDMOS transistor
E
© NXP B.V. 2010. All rights reserved.
ISSUE DATE
03-01-10
07-05-09
SOT502B
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