BLF6G10LS-160RN:11 NXP Semiconductors, BLF6G10LS-160RN:11 Datasheet - Page 2

• Manufacturer Part Number: BLF6G10LS-160RN:11
• Description: BLF6G10LS-160RN/LDMOST/REEL13/
• Manufacturer: NXP Semiconductors

Specifications of BLF6G10LS-160RN:11

• Transistor Type: LDMOS
• Frequency: 922.5MHz
• Gain: 22.5dB
• Voltage - Rated: 65V
• Current Rating: 39A
• Current - Test: 1.2A
• Voltage - Test: 32V
• Power - Output: 32W
• Package / Case: SOT502B
• Channel Type: N
• Channel Mode: Enhancement
• Continuous Drain Current: 39A
• Drain Source Voltage (max): 65V
• Output Power (max): 32W
• Power Gain (typ)@vds: 22.5@32VdB
• Frequency (min): 920MHz
• Frequency (max): 960MHz
• Package Type: LDMOST
• Pin Count: 3
• Forward Transconductance (typ): 13.5S
• Drain Source Resistance (max): 70(Typ)@6.15Vmohm
• Reverse Capacitance (typ): 4.2@32VpF
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 27%
• Mounting: Surface Mount
• Mode Of Operation: 2-Carrier W-CDMA
• Number Of Elements: 1
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 934063282118

NXP Semiconductors
2. Pinning information
3. Ordering information
4. Limiting values
BLF6G10-160RN_10LS-160RN_2
Product data sheet
1.3 Applications
Table 2.
[1]
Table 3.
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Pin
BLF6G10-160RN (SOT502A)
1
2
3
BLF6G10LS-160RN (SOT502B)
1
2
3
Type number
BLF6G10-160RN
BLF6G10LS-160RN -
Symbol
V
V
I
T
T
D
stg
j
DS
GS
RF power amplifiers for GSM, GSM EDGE, W-CDMA and CDMA base stations and
multi carrier applications in the 700 MHz to 1000 MHz frequency range.
Connected to flange.
Pinning
Ordering information
Limiting values
Parameter
drain-source voltage
gate-source voltage
drain current
storage temperature
junction temperature
drain
gate
source
drain
gate
source
Description
Package
Name Description
-
Rev. 02 — 21 January 2010
flanged LDMOST ceramic package; 2 mounting holes;
2 leads
earless flanged LDMOST ceramic package; 2 leads
Conditions
[1]
[1]
BLF6G10(LS)-160RN
Simplified outline
1
2
1
2
3
Power LDMOS transistor
3
Graphic symbol
-
Min
-
−0.5
-
−65
© NXP B.V. 2010. All rights reserved.
2
2
Max
65
+13
39
+150
225
sym112
sym112
Version
SOT502A
SOT502B
1
3
1
3
2 of 11
Unit
V
V
A
°C
°C