SI4933DY-T1-E3 Vishay, SI4933DY-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SI4933DY-T1-E3
• Description: TRANSISTOR,MOSFET,MATCHED PAIR,P-CHANNEL,12V V(BR)DSS,7.4A I(D),SO
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI4933DY-T1-E3

• Rohs Compliant: YES
• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 14 mOhm @ 9.8A, 4.5V
• Drain To Source Voltage (vdss): 12V
• Current - Continuous Drain (id) @ 25° C: 7.4A
• Vgs(th) (max) @ Id: 1V @ 500µA
• Gate Charge (qg) @ Vgs: 70nC @ 4.5V
• Power - Max: 1.1W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI4933DY-T1-E3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 71980
S09-0867-Rev. D, 18-May-09
0.030
0.025
0.020
0.015
0.010
0.005
0.000
30
10
5
4
3
2
1
0
1
0.0
0
0
V
I
D
DS
Source-Drain Diode Forward Voltage
= 9.8 A
0.2
On-Resistance vs. Drain Current
= 6 V
10
6
V
GS
V
T
0.4
SD
Q
J
= 1.8 V
g
= 150 °C
- Source-to-Drain Voltage (V)
I
- Total Gate Charge (nC)
D
Gate Charge
- Drain Current (A)
12
20
0.6
0.8
T
18
30
J
V
= 25 °C
GS
1.0
= 2.5 V
V
GS
40
24
= 4.5 V
1.2
30
50
1.4
0.030
0.025
0.020
0.015
0.010
0.005
0.000
6000
5000
4000
3000
2000
1000
1.6
1.4
1.2
1.0
0.8
0.6
0
- 50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
I
V
I
D
D
- 25
GS
C
= 3 A
= 9.8 A
rss
2
= 4.5 V
V
1
V
DS
0
GS
T
J
- Drain-to-Source Voltage (V)
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
4
25
Capacitance
2
50
C
C
6
Vishay Siliconix
I
oss
D
iss
= 9.8 A
3
75
Si4933DY
8
100
www.vishay.com
4
10
125
150
12
5
3