SI4933DY-T1-E3 Vishay, SI4933DY-T1-E3 Datasheet - Page 5

• Manufacturer Part Number: SI4933DY-T1-E3
• Description: TRANSISTOR,MOSFET,MATCHED PAIR,P-CHANNEL,12V V(BR)DSS,7.4A I(D),SO
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI4933DY-T1-E3

• Rohs Compliant: YES
• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 14 mOhm @ 9.8A, 4.5V
• Drain To Source Voltage (vdss): 12V
• Current - Continuous Drain (id) @ 25° C: 7.4A
• Vgs(th) (max) @ Id: 1V @ 500µA
• Gate Charge (qg) @ Vgs: 70nC @ 4.5V
• Power - Max: 1.1W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI4933DY-T1-E3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71980.
Document Number: 71980
S09-0867-Rev. D, 18-May-09
0.01
0.1
2
1
10
-4
Single Pulse
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
10
-3
Normalized Thermal Transient Impedance, Junction-to-Foot
Square Wave Pulse Duration (s)
10
-2
10
-1
1
Vishay Siliconix
Si4933DY
www.vishay.com
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