SI4933DY-T1-E3 Vishay, SI4933DY-T1-E3 Datasheet - Page 8

• Manufacturer Part Number: SI4933DY-T1-E3
• Description: TRANSISTOR,MOSFET,MATCHED PAIR,P-CHANNEL,12V V(BR)DSS,7.4A I(D),SO
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI4933DY-T1-E3

• Rohs Compliant: YES
• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 14 mOhm @ 9.8A, 4.5V
• Drain To Source Voltage (vdss): 12V
• Current - Continuous Drain (id) @ 25° C: 7.4A
• Vgs(th) (max) @ Id: 1V @ 500µA
• Gate Charge (qg) @ Vgs: 70nC @ 4.5V
• Power - Max: 1.1W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI4933DY-T1-E3TR

Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR SO-8
www.vishay.com
22
Return to Index
Return to Index
(0.559)
0.022
Recommended Minimum Pads
Dimensions in Inches/(mm)
(4.369)
0.172
(1.270)
(0.711)
0.050
0.028
Document Number: 72606
Revision: 21-Jan-08