SI4933DY-T1-E3 Vishay, SI4933DY-T1-E3 Datasheet - Page 6

• Manufacturer Part Number: SI4933DY-T1-E3
• Description: TRANSISTOR,MOSFET,MATCHED PAIR,P-CHANNEL,12V V(BR)DSS,7.4A I(D),SO
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI4933DY-T1-E3

• Rohs Compliant: YES
• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 14 mOhm @ 9.8A, 4.5V
• Drain To Source Voltage (vdss): 12V
• Current - Continuous Drain (id) @ 25° C: 7.4A
• Vgs(th) (max) @ Id: 1V @ 500µA
• Gate Charge (qg) @ Vgs: 70nC @ 4.5V
• Power - Max: 1.1W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI4933DY-T1-E3TR

Document Number: 71192
11-Sep-06
SOIC (NARROW): 8-LEAD
JEDEC Part Number: MS-012
e
ECN: C-06527-Rev. I, 11-Sep-06
DWG: 5498
D
DIM
A
A
B
C
D
E
H
S
e
h
L
q
1
B
A
1
A
1.35
0.10
0.35
0.19
4.80
3.80
5.80
0.25
0.50
0.44
Min
0°
MILLIMETERS
0.25 mm (Gage Plane)
1.27 BSC
8
1
7
2
Max
1.75
0.20
0.51
0.25
5.00
4.00
6.20
0.50
0.93
0.64
8°
6
3
L
5
4
E
S
h x 45
0.0075
0.053
0.004
0.014
0.189
0.150
0.228
0.010
0.020
0.018
Min
H
0°
0.050 BSC
INCHES
Package Information
C
0.069
0.008
0.020
0.010
0.196
0.157
0.244
0.020
0.037
0.026
Max
8°
q
Vishay Siliconix
All Leads
0.101 mm
0.004"
www.vishay.com
1