CY7C1412AV18-200BZC Cypress Semiconductor Corp, CY7C1412AV18-200BZC Datasheet - Page 26

• Manufacturer Part Number: CY7C1412AV18-200BZC
• Description: SRAM (Static RAM)
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C1412AV18-200BZC

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous, QDR II
• Memory Size: 36M (2M x 18)
• Speed: 200MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 165-TFBGA
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Document History Page
Document #: 38-05615 Rev. *H
Revision
Document Title: CY7C1412AV18/CY7C1414AV18, 36 Mbit QDR
Document Number: 38-05615
*A
*B
*C
*D
**
1274725 VKN/AESA
247331
326519
413953
468029
ECN
Change
Orig. of
NXR
NXR
SYT
SYT
Submission
See ECN
See ECN
See ECN
See ECN
See ECN
Date
Description of Change
New Datasheet
Removed CY7C1425AV18 from the title
Included 300 MHz Speed grade
Replaced TBDs with their respective values for I
Added Industrial temperature grade
Replaced the TBDs on the Thermal Characteristics Table to 

Replaced TBDs in the Capacitance Table to their respective values for the
165 FBGA Package
Changed typo of bit # 47 to bit # 108 under the EXTEST OUTPUT BUS
TRI-STATE on Page 16
Added Pb-free Product Information
Updated the Ordering Information by Shading and Unshading MPNs according
to availability
Converted from preliminary to final.
Added CY7C1425AV18 part number to title.
Removed 300 MHz speed Bin.
Changed address of Cypress Semiconductor Corporation on Page# 1 from “3901
North First Street” to “198 Champion Court”
Changed C, C Description in Feature Section and Pin Description.
Added Power Up sequence and Wave form on page# 19
Added foot notes # 13, 14, 15 on page# 19
Replaced Three-state with Tri-state.
Changed the description of I
on page# 20
Modified the I
Modified test condition in Footnote # 20 on page# 20 from V
V
Replaced Package Name column with Package Diagram in the Ordering
Information table.
Updated Ordering Information Table.
Modified the ZQ Definition from Alternately, this pin can be connected directly to
V
Included Maximum Ratings for Supply Voltage on V
Changed the Maximum Ratings for DC Input Voltage from V
Changed t
t
Characteristics table
Modified Power Up waveform
Changed the Maximum rating of Ambient Temperature with Power Applied from
–10 C to +85 C to –55 C to +125 C
Added additional notes in the AC parameter section
Changed the t
for 200 MHz from 0.6 ns to 0.4 ns, and for 167 MHz from 0.7 ns to 0.5 ns.
Modified AC Switching Waveform.
Corrected the typo In the AC Switching Characteristics Table.
Updated the Ordering Information Table.
Modified footnote # 30
CH
DDQ
DD
JC
from 10 ns to 5 ns and changed t
= 3.2C/W
to Alternately, this pin can be connected directly to V
< V
DD.
TH
and t
DD
SC
®
and I
and t
II SRAM Two Word Burst Architecture
TL
from 40 ns to 20 ns, changed t
SB
HC
values.
value for 250 MHz from 0.5 ns to 0.35 ns,
X
from Input Load Current to Input Leakage Current
TDOV
from 20 ns to 10 ns in TAP AC Switching
DD
TMSS
and I
DDQ
CY7C1412AV18
CY7C1414AV18
, t
Relative to GND
SB1
DDQ.
TDIS
DDQ
DDQ
JA
, t
CS
= 17.2C/W and
< V
to V
Page 26 of 27
, t
TMSH
DD
DD.
to
, t
TDIH
,
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