MRF8P8300HR6 Freescale Semiconductor, MRF8P8300HR6 Datasheet

RF MOSFET Power HV8-800 28V NI1230H

MRF8P8300HR6

Manufacturer Part Number
MRF8P8300HR6
Description
RF MOSFET Power HV8-800 28V NI1230H
Manufacturer
Freescale Semiconductor
Datasheet

Specifications of MRF8P8300HR6

Mounting Style
SMD/SMT
Transistor Polarity
N-Channel
Configuration
Single
Package / Case
NI-1230
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
© Freescale Semiconductor, Inc., 2011. All rights reserved.
RF Device Data
Freescale Semiconductor
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
from 790 to 820 MHz. Can be used in Class AB and Class C for all typical
cellular base station modulation formats.
• Typical Single--Carrier W--CDMA Performance: V
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 805 MHz, 500 Watts CW
• Typical P
Features
• 100% PAR Tested for Guaranteed Output Power Capability
• Characterized with Series Equivalent Large--Signal Impedance Parameters
• Internally Matched for Ease of Use
• Integrated ESD Protection
• Greater Negative Gate--Source Voltage Range for Improved Class C
• Designed for Digital Predistortion Error Correction Systems
• Optimized for Doherty Applications
• RoHS Compliant
• In Tape and Reel. R6 Suffix = 150 Units, 56 mm Tape Width, 13 inch Reel.
Table 1. Maximum Ratings
Table 2. Thermal Characteristics
Drain--Source Voltage
Gate--Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Thermal Resistance, Junction to Case
Designed for W--CDMA and LTE base station applications with frequencies
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
2000 mA, P
Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability
on CCDF.
Output Power (3 dB Input Overdrive from Rated P
Enhanced Ruggedness
and Common Source S--Parameters
Operation
For R5 Tape and Reel option, see p. 14.
Case Temperature 80°C, 96 W CW, 28 Vdc, I
Case Temperature 85°C, 300 W CW, 28 Vdc, I
calculators by product.
Select Documentation/Application Notes -- AN1955.
Frequency
790 MHz
805 MHz
820 MHz
out
out
@ 1 dB Compression Point ≃ 340 Watts CW
= 96 Watts Avg., IQ Magnitude Clipping, Channel
Rating
(dB)
20.9
21.0
20.9
G
ps
Characteristic
(1,2)
35.2
35.5
35.7
(%)
η
D
DQ
DQ
= 2000 mA, 820 MHz
Symbol
Output PAR
= 2000 mA, 820 MHz
V
V
V
T
T
DSS
T
stg
GS
DD
C
J
(dB)
DD
6.2
6.2
6.1
out
= 28 Volts, I
), Designed for
--65 to +150
--0.5, +70
--6.0, +10
32, +0
Value
150
225
ACPR
(dBc)
--38.1
--38.1
--38.2
DQ
=
Unit
Vdc
Vdc
Vdc
°C
°C
°C
Symbol
R
θJC
RF
RF
Document Number: MRF8P8300H
CASE 375D- -05, STYLE 1
CASE 375E- -04, STYLE 1
inA
inB
MRF8P8300HSR6
790- -820 MHz, 96 W AVG., 28 V
/V
/V
MRF8P8300HR6 MRF8P8300HSR6
MRF8P8300HR6
MRF8P8300HSR6
MRF8P8300HR6
GSA
GSB
Figure 1. Pin Connections
LATERAL N- -CHANNEL
RF POWER MOSFETs
NI- -1230S
NI- -1230
SINGLE W- -CDMA
3
4
Value
(Top View)
0.26
0.21
(2,3)
Rev. 0, 1/2011
1
2 RF
RF
outA
outB
°C/W
Unit
/V
/V
DSA
DSB
1

Related parts for MRF8P8300HR6

MRF8P8300HR6 Summary of contents

Page 1

... SINGLE W- -CDMA LATERAL N- -CHANNEL RF POWER MOSFETs CASE 375D- -05, STYLE 1 NI- -1230 MRF8P8300HR6 CASE 375E- -04, STYLE 1 NI- -1230S MRF8P8300HSR6 inA GSA inB GSB (Top View) Figure 1. Pin Connections (2,3) Symbol Value R θJC 0.26 0.21 MRF8P8300HR6 MRF8P8300HSR6 /V outA DSA /V outB DSB Unit °C/W 1 ...

Page 2

... Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. Frequency 790 MHz 805 MHz 820 MHz 1. Each side of device measured separately. 2. Part internally matched both on input and output. MRF8P8300HR6 MRF8P8300HSR6 2 = 25°C unless otherwise noted) Symbol I DSS I DSS ...

Page 3

... IMD sym VBW res = 96 W Avg. G out F ∆G ∆P1dB Min Typ Max = 2000 mA, 790--820 MHz Bandwidth — 340 — — 35 — — 35 — — 0.5 — — 0.0185 — — 0.0076 — MRF8P8300HR6 MRF8P8300HSR6 Unit W MHz MHz dB dB/°C dB/°C 3 ...

Page 4

... C6* C24 *C5, C6, C47, and C48 are mounted vertically. Figure 2. MRF8P8300HR6(HSR6) Test Circuit Component Layout Table 5. MRF8P8300HR6(HSR6) Test Circuit Component Designations and Values Part B1, B2 Short Ferrite Beads C1, C2, C39, C40, C41, C42 2.1 pF Chip Capacitors C3, C49, C50 1.0 pF Chip Capacitors C4 120 pF Chip Capacitor ...

Page 5

... RF Device Data Freescale Semiconductor Devices are tested in a parallel configuration Single--ended λ λ Quadrature combined 4 4 λ λ λ λ Doherty 4 4 λ λ λ λ Push--pull Possible Circuit Topologies Figure 3. MRF8P8300HR6 MRF8P8300HSR6 5 ...

Page 6

... MRF8P8300HR6 MRF8P8300HSR6 6 TYPICAL CHARACTERISTICS η Vdc (Avg.), I = 2000 mA DD out DQ Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth Input Signal PAR = 7 0.01% Probability on CCDF PARC IRL ACPR 750 770 790 810 830 850 f, FREQUENCY (MHz Watts Avg ...

Page 7

... MHz --70 -- --90 --100 --9 Figure 10. Single- -Carrier W- -CDMA Spectrum 66 0 790 MHz --10 55 η --20 ACPR -- --50 0 --60 400 --5 --10 --15 --20 1000 1060 3.84 MHz Channel BW +ACPR in 3.84 MHz Integrated BW Integrated BW --7.2 --5.4 --3.6 --1.8 0 1.8 3.6 5.4 f, FREQUENCY (MHz) MRF8P8300HR6 MRF8P8300HSR6 7 ...

Page 8

... Figure 11. Series Equivalent Source and Load Impedance MRF8P8300HR6 MRF8P8300HSR6 Vdc 2000 mA Avg out source load MHz Ω Ω 730 1.07 -- j1.15 0.86 -- j0.18 750 1.06 -- j0.97 0.90 + j0.04 770 1.11 -- j0.78 1.07 + j0.46 790 1.05 -- j0.62 1.28 -- j0.67 810 1.11 -- j0.45 ...

Page 9

... P1dB 1.16 -- j1.39 822 P1dB 1.24 -- j1.73 Figure 12. Pulsed CW Output Power versus Input Power @ 28 V Ideal Actual 822 MHz 806 MHz 790 MHz 40 41.5 P3dB dBm 55.6 55.6 55.4 Z load Ω 0.78 -- j0.73 0.76 -- j0.71 0.76 -- j0.74 MRF8P8300HR6 MRF8P8300HSR6 9 ...

Page 10

... MRF8P8300HR6 MRF8P8300HSR6 10 PACKAGE DIMENSIONS RF Device Data Freescale Semiconductor ...

Page 11

... RF Device Data Freescale Semiconductor MRF8P8300HR6 MRF8P8300HSR6 11 ...

Page 12

... MRF8P8300HR6 MRF8P8300HSR6 12 RF Device Data Freescale Semiconductor ...

Page 13

... RF Device Data Freescale Semiconductor MRF8P8300HR6 MRF8P8300HSR6 13 ...

Page 14

... MRF8P8300H and MRF8P8300HS in the R6 tape and reel option. The following table summarizes revisions to this document. Revision Date 0 Jan. 2011 • Initial Release of Data Sheet MRF8P8300HR6 MRF8P8300HSR6 14 R5 TAPE AND REEL OPTION REVISION HISTORY Description RF Device Data Freescale Semiconductor ...

Page 15

... Freescale Semiconductor was negligent regarding the design or manufacture of the part. Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2011. All rights reserved. MRF8P8300HR6 MRF8P8300HSR6 15 ...

Related keywords