MRF8P8300HR6 Freescale Semiconductor, MRF8P8300HR6 Datasheet - Page 6

• Manufacturer Part Number: MRF8P8300HR6
• Description: RF MOSFET Power HV8-800 28V NI1230H
• Manufacturer: Freescale Semiconductor

Specifications of MRF8P8300HR6

• Mounting Style: SMD/SMT
• Transistor Polarity: N-Channel
• Configuration: Single
• Package / Case: NI-1230
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

6
MRF8P8300HR6 MRF8P8300HSR6
21.5
20.5
19.5
22
21
20
19
Figure 4. Output Peak- -to- -Average Ratio Compression (PARC)
--10
--20
--30
--40
--50
--60
25
24
23
22
21
20
19
18
17
16
15
--1
--2
--3
--4
--5
1
0
730
40
1
Broadband Performance @ P
Figure 5. Intermodulation Distortion Products
V
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
V
Two--Tone Measurements
(f1 + f2)/2 = Center Frequency of 805 MHz
--1 dB = 75.1 W
η
IM5--L
DD
DD
Compression (PARC) versus Output Power
D
Figure 6. Output Peak- -to- -Average Ratio
= 28 Vdc, I
= 28 Vdc, P
750
IM5--U
TYPICAL CHARACTERISTICS
ACPR
V
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF
IRL
Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF
IM7--L
70
IM7--U
DD
770
versus Two- -Tone Spacing
DQ
= 28 Vdc, P
out
P
TWO--TONE SPACING (MHz)
out
= 2000 mA, f = 805 MHz
= 290 W (PEP), I
, OUTPUT POWER (WATTS)
f, FREQUENCY (MHz)
790
100
--2 dB = 110.5 W
out
= 96 W (Avg.), I
810
10
PARC
IM3--U
IM3--L
DQ
130
= 2000 mA
830
out
--3 dB = 153.4 W
DQ
= 96 Watts Avg.
= 2000 mA
850
160
PARC
870
ACPR
G
η
G
ps
D
ps
890
100
190
36
34
32
30
28
--30
--32
--34
--36
--38
--40
56
50
44
38
32
26
20
Freescale Semiconductor
--25
--30
--35
--40
--45
--50
--55
0
--4
--8
--12
--16
--20
RF Device Data
--1
--1.3
--1.6
--1.9
--2.2
--2.5