MRF8P8300HR6 Freescale Semiconductor, MRF8P8300HR6 Datasheet - Page 2

• Manufacturer Part Number: MRF8P8300HR6
• Description: RF MOSFET Power HV8-800 28V NI1230H
• Manufacturer: Freescale Semiconductor

Specifications of MRF8P8300HR6

• Mounting Style: SMD/SMT
• Transistor Polarity: N-Channel
• Configuration: Single
• Package / Case: NI-1230
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

2
MRF8P8300HR6 MRF8P8300HSR6
Table 3. ESD Protection Characteristics
Table 4. Electrical Characteristics
Off Characteristics
On Characteristics
Functional Tests
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @ ±5 MHz Offset.
Typical Broadband Performance (In Freescale Test Fixture, 50 ohm system) V
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @ ±5 MHz Offset.
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
Zero Gate Voltage Drain Leakage Current
Zero Gate Voltage Drain Leakage Current
Gate--Source Leakage Current
Gate Threshold Voltage
Gate Quiescent Voltage
Drain--Source On--Voltage
Power Gain
Drain Efficiency
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
Input Return Loss
1. Each side of device measured separately.
2. Part internally matched both on input and output.
(V
(V
(V
(V
(V
(V
DS
DS
GS
DS
DD
GS
= 70 Vdc, V
= 28 Vdc, V
= 5 Vdc, V
= 10 Vdc, I
= 28 Vdc, I
= 10 Vdc, I
(2)
DS
D
DQ
D
(1)
(In Freescale Test Fixture, 50 ohm system) V
GS
GS
= 400 μAdc)
= 3 Adc)
= 0 Vdc)
= 2000 mA, Measured in Functional Test)
= 0 Vdc)
= 0 Vdc)
(1)
(1)
Frequency
790 MHz
805 MHz
820 MHz
Characteristic
Test Methodology
(T
A
= 25°C unless otherwise noted)
DD
= 28 Vdc, I
(dB)
20.9
21.0
20.9
G
ps
DD
DQ
Symbol
V
V
V
ACPR
I
I
I
DS(on)
PAR
= 28 Vdc, I
GS(th)
GS(Q)
= 2000 mA, P
G
GSS
IRL
DSS
DSS
η
ps
D
35.2
35.5
35.7
(%)
η
D
DQ
20.0
34.5
Min
1.5
2.3
0.1
5.9
—
—
—
—
—
out
= 2000 mA, P
= 96 W Avg., f = 820 MHz,
Output PAR
(dB)
6.2
6.2
6.1
--38.2
20.9
35.7
Typ
--12
IV (Minimum)
A (Minimum)
2.3
3.1
0.2
6.1
2 (Minimum)
—
—
—
out
Class
Freescale Semiconductor
= 96 W Avg.,
ACPR
(dBc)
--38.1
--38.1
--38.2
--36.5
Max
23.5
3.0
3.8
0.3
10
—
—
--9
1
1
RF Device Data
(continued)
μAdc
μAdc
μAdc
(dB)
Unit
Vdc
Vdc
Vdc
dBc
IRL
--11
--12
--12
dB
dB
dB
%